High Current N Channel MOSFET BLUE ROCKET BRCS035N08SHBD Suitable for Power Inverters and Appliances

Name: High Current N Channel MOSFET BLUE ROCKET BRCS035N08SHBD Suitable for Power Inverters and Appliances
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: BRCS035N08SHBD
Availability: InStock

Key Attributes

Model Number: BRCS035N08SHBD

Product Custom Attributes

Drain To Source Voltage:

80V

Current - Continuous Drain(Id):

195A

Operating Temperature -:

-55℃~+150℃

RDS(on):

3.5mΩ@10V

Gate Threshold Voltage (Vgs(th)):

4V@250uA

Type:

N-Channel

Reverse Transfer Capacitance (Crss@Vds):

305pF

Number:

1 N-channel

Output Capacitance(Coss):

2.44nF

Input Capacitance(Ciss):

6.35nF

Pd - Power Dissipation:

227W

Gate Charge(Qg):

128nC@10V

Mfr. Part #:

BRCS035N08SHBD

Package:

TO-263

Product Description

Product Overview

The BRCS035N08SHBD is an N-channel MOSFET designed for high-performance applications. It features ultra-low on-resistance, fast switching speeds, and is a halogen-free product. This MOSFET is suitable for use in BMS appliances, high-power inverter systems, and general power appliances.

Product Attributes

Brand: FsbRec
Product Type: N-Channel MOSFET
Package Type: TO-263 Plastic Package
Halogen Free: Yes
Marking Code: BR 035N08SH (followed by Lot No. Code)

Technical Specifications

Parameter	Symbol	Rating Unit	Value
Absolute Maximum Ratings (Ta=25)
Drain-Source Voltage	VDS	V	80
Drain Current (Tc=25)	ID(Tc=25)	A	195
Pulsed Drain Current	IDM	A	400
Gate-Source Voltage	VGS	V	20
Single Pulsed Avalanche Energy (L=0.5mH)	EAS	mJ	1200
Avalanche Current	IAS	A	47.5
Total Power Dissipation (Tc=25)	PD(Tc=25)	W	227
Junction and Storage Temperature Range	TJ,TSTG		-55 to 150
Thermal Resistance-Junction to Ambient (t 10s)	RJA	/W	15
Thermal Resistance-Junction to Case (Steady-State)	RJC	/W	0.55
Electrical Characteristics (Ta=25)
Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Drain-Source Breakdown Voltage	BVDSS	VGS=0V, ID=250A	80	94		V
Zero Gate Voltage Drain Current	IDSS	VDS=80V, VGS=0V			1	A
Gate-Body Leakage Current (Forward)	IGSS	VGS=20V, VDS=0V			100	nA
Gate Threshold Voltage	VGS(th)	VDS=VGS, ID=250A	2	2.9	4	V
Static Drain-Source On-Resistance	RDS(on)	VGS=10V, ID=30A		2.9	3.5	m
Forward On Voltage	VSD	VGS=0V, IS=1A			1.2	V
Input Capacitance	Ciss	VDS=25V, VGS=0V, f=1MHz		6350		pF
Output Capacitance	Coss	VDS=25V, VGS=0V, f=1MHz		2440		pF
Reverse Transfer Capacitance	Crss	VDS=25V, VGS=0V, f=1MHz		305		pF
Gate resistance	Rg	f=1MHz		1.6
Total Gate Charge	Qg	VGS=10V, VDS=40V, ID=20A		128		nC
Gate Source Charge	Qgs	VGS=10V, VDS=40V, ID=20A		36		nC
Gate Drain Charge	Qgd	VGS=10V, VDS=40V, ID=20A		23		nC
Turn-On Delay Time	td(on)	VGS=10V, VDS=40V, RL=2, RGEN=3		25		ns
Turn-On Rise Time	tr	VGS=10V, VDS=40V, RL=2, RGEN=3		19		ns
Turn-Off Delay Time	td(off)	VGS=10V, VDS=40V, RL=2, RGEN=3		56		ns
Turn-Off Fall Time	tf	VGS=10V, VDS=40V, RL=2, RGEN=3		18		ns

Packaging Specifications

Reel Package

Package Type	Units/Reel	Reels/Inner Box	Units/Inner Box	Inner Boxes/Outer Box	Units/Outer Box	Dimensions (mm)
TO-263	800	1	800	6	4,800	1324 (Reel), 36036050 (Inner Box), 380335366 (Outer Box)

Tube Package

Package Type	Units/Tube	Tubes/Inner Box	Units/Inner Box	Inner Boxes/Outer Box	Units/Outer Box	Dimensions (mm)
TO-263	50	20	1,000	5	5,000	532337.0 (Tube), 55516450 (Inner Box), 575290180 (Outer Box)

Soldering Profile

Temperature Profile for IR Reflow Soldering (Pb-Free):

Preheating: 150~180, Time: 60~90 seconds
Peak Temperature: 2455, Duration: 50.5 seconds
Cooling Speed: 2~10/sec

Resistance to Soldering Heat Test Conditions:

Temperature: 2605
Time: 101 seconds

2410121231_BLUE-ROCKET-BRCS035N08SHBD_C22449030.pdf

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