Switching and General Purpose Electronic Circuit Transistor CBI BC858CW NPN Silicon Epitaxial Planar

Key Attributes
Model Number: BC858CW
Product Custom Attributes
Mfr. Part #:
BC858CW
Package:
SOT-323
Product Description

Product Overview

This NPN Silicon Epitaxial Planar Transistor is designed for general purpose and switching applications. It offers various models with distinct voltage and current ratings, making it suitable for a range of electronic circuits.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Type: NPN Silicon Epitaxial Planar Transistor

Technical Specifications

Parameter Symbol BC846W BC847W BC848W BC849W BC850W Unit
Absolute Maximum Ratings (Ta = 25 C)
Collector Base Voltage VCBO 80 50 30 30 50 V
Collector Emitter Voltage VCEO 65 45 30 30 45 V
Emitter Base Voltage VEBO 6 6 5 5 5 V
Collector Current IC 100 mA
Peak Collector Current ICM 200 mA
Total Power Dissipation Ptot 200 mW
Junction Temperature Tj 150 C
Storage Temperature Range Tstg -55 to +150 C
Characteristics at Ta = 25 C
DC Current Gain hFE 110-220 200-450 420-800 - - -
BC846AW~BC850AW BC846BW~BC850BW BC846CW~BC850CW
Collector Base Voltage at IC = 10 A VCBO 80 50 30 30 50 V
Collector Emitter Voltage at IC = 10 mA VCEO 65 45 30 30 45 V
Emitter Base Voltage at IE = 1 A VEBO 6 6 5 5 5 V
Collector Base Cutoff Current at VCB = 30 V ICBO -15 nA
Emitter Base Cutoff Current at VEB = 5 V IEBO -100 nA
Collector Emitter Saturation Voltage at IC = 10 mA, IB = 0.5 mA VCE(sat) -0.25 V
IC = 100 mA, IB = 5 mA -0.6
Base Emitter Voltage at VCE = 5 V, IC = 2 mA VBE -0.7 V
VCE = 5 V, IC = 10 mA -0.77
Transition Frequency at VCE = 5 V, IC = 10 mA, f = 100 MHz fT 100 MHz
Collector Output Capacitance at VCB = 10 V, IE = 0, f = 1 MHz Cob -4.5 pF

2509181531_CBI-BC858CW_C51814154.pdf

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