P Channel MOSFET BORN BMSN3139 with Ultra Low On Resistance and High Continuous Drain Current Rating
Key Attributes
Model Number:
BMSN3139
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-
RDS(on):
190mΩ@2.5V,1.5A
Gate Threshold Voltage (Vgs(th)):
1.1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
55pF
Number:
1 P-Channel
Output Capacitance(Coss):
75pF
Input Capacitance(Ciss):
405pF
Pd - Power Dissipation:
300mW
Gate Charge(Qg):
-
Mfr. Part #:
BMSN3139
Package:
SOT-323
Product Description
Product Overview
The BMSN3139 is a P-Channel Enhancement mode MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. This surface mount device is packaged in a SOT-323 and is suitable for applications such as PWM, load switching, and power management.
Product Attributes
- Brand: born-tw.com
- Package Type: SOT-323
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -20 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | -2.0 | A | |||
| Pulsed Drain Current (note1) | IDM | -10 | A | |||
| Power Dissipation (Ta=25) | PD | 0.3 | W | |||
| Thermal Resistance Junction to Ambient (note2) | RJA | 417 | /mW | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | 150 | |||
| Drain-Source Breakdown Voltage | VBR(DSS) | VGS=0V,ID=-250A | -20 | V | ||
| Gate Threshold Voltage | VGS(th) | ID=-250A, VGS=VDS | -0.4 | -1.1 | V | |
| Gate-body leakage current | IGSS | VGS=12V,VDS=0V | 1 | A | ||
| Zero gate voltage drain current | IDSS | VDS=-20V,VGS=0V | 100 | nA | ||
| Drain-source on-resistance (note1) | RDS(ON) | VGS=-4.5V,ID=-2.0A | 135 | m | ||
| Drain-source on-resistance (note1) | RDS(ON) | VGS=-2.5V,ID=-1.5A | 190 | m | ||
| Forward tranconductance (note1) | gFS | DGS=-5V,ID=-4A | 5 | S | ||
| Drain-Source Diode Forward Voltage (note1) | VSD | VGS = 0V, ISD = -0.7A | -1.2 | V | ||
| Input Capacitance | Ciss | VDS=-10V , VGS=0V, f=1MHz | 405 | pF | ||
| Output Capacitance | Coss | VDS=-10V , VGS=0V, f=1MHz | 75 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=-10V , VGS=0V, f=1MHz | 55 | pF | ||
| Turn-on delay time | td(on) | VDD=-10V,IDS=-1A , VGEN=-4.5V,RL=10 | 20 | ns | ||
| Turn-on rise time | tr | VDD=-10V,IDS=-1A , VGEN=-4.5V,RL=10 | 60 | ns | ||
| Turn-off delay time | td(off) | VDD=-10V,IDS=-1A , VGEN=-4.5V,RL=10 | 50 | ns | ||
| Turn-off fall time | tf | VDD=-10V,IDS=-1A , VGEN=-4.5V,RL=10 | 20 | ns |
Package Information
| Symbol | Dim in mm | Min | Nor | Max |
|---|---|---|---|---|
| A | 0.90 | 1.00 | 1.10 | |
| A1 | 0.00 | 0.05 | 0.10 | |
| A2 | 0.90 | 0.95 | 1.00 | |
| b | 0.20 | 0.30 | 0.40 | |
| c | 0.08 | 0.12 | 0.15 | |
| D | 2.00 | 2.10 | 2.20 | |
| E | 2.15 | 2.30 | 2.45 | |
| E1 | 1.15 | 1.25 | 1.35 | |
| e | 0.650TPY. | |||
| e1 | 1.2 | 1.3 | 1.4 | |
| L | 0.26 | 0.36 | 0.46 | |
| L1 | 0.525REF. | |||
| 0 | 4 | 8 |
Ordering Information
| Order Code | Package | Base qty | Delivery mode | Marking |
|---|---|---|---|---|
| BMSN3139 | SOT-323 | 3K | Tape and reel | 39K A1 |
2410121839_BORN-BMSN3139_C19078062.pdf
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