Compact BLUE ROCKET BSS123 N channel MOSFET designed for battery management and PWM control systems
Key Attributes
Model Number:
BSS123
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
170mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
6Ω@10V
Gate Threshold Voltage (Vgs(th)):
2V@1mA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3.4pF
Number:
1 N-channel
Output Capacitance(Coss):
7pF
Input Capacitance(Ciss):
73pF
Pd - Power Dissipation:
360mW
Mfr. Part #:
BSS123
Package:
SOT-23
Product Description
Product Overview
The BSS123 is an N-channel MOSFET in a SOT-23 plastic package, designed for high-density battery applications with extremely low RDS(ON). This device is suitable for use as a load switch or in Pulse Width Modulation (PWM) applications.
Product Attributes
- Brand: FSB (implied by datasheet URL)
- Package Type: SOT-23
- Channel Type: N-Channel
- Lead Free: Yes (implied by reflow soldering note)
Technical Specifications
| Parameter | Symbol | Rating | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDSS | 100 | V |
| Drain Current Continuous | ID | 170 | mA |
| Drain Current Pulsed | ID(TC=25) | 680 | mA |
| Continuous DrainSource | IS | 170 | mA |
| GateSource Voltage | VGS | 20 | V |
| Power Dissipation | PD | 0.36 | W |
| Thermal Resistance, Junction-to-Ambient | RJA | 350 | /W |
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 to 150 |
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| DrainSource Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 100 | V | ||
| Zero Gate Voltage Drain Current | IDSS(1) | VDS=100V, S=0V | 1.0 | A | ||
| Zero Gate Voltage Drain Current | IDSS(2) | VDS=100V, VGS=0V, Tj=125 | 60 | A | ||
| Zero Gate Voltage Drain Current | IDSS(3) | VDS=20V, VGS=0V | 10 | nA | ||
| GateBody Leakage | IGSS | VGS=20V, VDS=0V | 50 | nA | ||
| OnState Drain Current | ID(on) | VDS=5.0V, VGS=10V | 0.68 | A | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=1.0mA | 0.8 | 1.7 | 2.0 | V |
| Static DrainSource OnResistance | RDS(on)(1) | VGS=10V, ID=0.17A | 1.2 | 6.0 | ||
| Static DrainSource OnResistance | RDS(on)(2) | VGS=4.5V, ID=0.17A | 1.3 | 10 | ||
| Static DrainSource OnResistance | RDS(on)(3) | VGS=10V, ID=0.17A, Tj=125 | 2.2 | 12 | ||
| Forward Transconductance | gFS | VDS=10V, ID=0.17A | 0.08 | 0.8 | S | |
| DrainSource Diode Forward Voltage | VSD | VGS=0V, IS=0.34A | 0.8 | 1.3 | V | |
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHz | 73 | pF | ||
| Output Capacitance | Coss | VDS=25V, VGS=0V, f=1.0MHz | 7 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, f=1.0MHz | 3.4 | pF | ||
| TurnOn Delay Time | td(on) | ID=0.28A, VGS=10V, VDD=30V, RG=6.0 | 1.7 | 3.4 | ns | |
| TurnOn Rise Time | tr | ID=0.28A, VGS=10V, VDD=30V, RG=6.0 | 9 | 18 | ns | |
| TurnOff Delay Time | td(off) | ID=0.28A, VGS=10V, VDD=30V, RG=6.0 | 17 | 31 | ns | |
| TurnOff Fall Time | tf | ID=0.28A, VGS=10V, VDD=30V, RG=6.0 | 2.4 | 5.0 | ns |
| Package Type | Units/Reel | Reels/Inner Box | Units/Inner Box | Inner Boxes/Outer Box | Units/Outer Box | Dimensions (mm) |
|---|---|---|---|---|---|---|
| SOT-23 | 3,000 | 10 | 30,000 | 6 | 180,000 | 78, 180120180, 390385205 |
2410121238_BLUE-ROCKET-BSS123_C358379.pdf
Related Products
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads
Product OverviewThe BZT52C2V4SQ thru BZT52C47SQ series are small signal Zener diodes designed for general regulation functions, including automotive applications. They feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. These diodes offer ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
