N Channel Enhancement Mode MOSFET BORN AO3400A with Advanced Trench Technology and Low On Resistance
Key Attributes
Model Number:
AO3400A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
32mΩ@10V,5.8A
Gate Threshold Voltage (Vgs(th)):
1.4V@250uA
Number:
1 N-channel
Input Capacitance(Ciss):
823pF@15V
Pd - Power Dissipation:
1.4W
Mfr. Part #:
AO3400A
Package:
SOT-23
Product Description
Product Overview
The AO3400A is an N-Channel Enhancement-Mode MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. This MOSFET is designed for efficient power management applications. It is ROHS compliant and comes in a SOT-23 package.
Product Attributes
- Type: MOSFET
- Channel Type: N-Channel
- Mode: Enhancement-Mode
- Technology: Advanced trench process
- Design: High Density Cell Design for Ultra Low On-Resistance
- Compliance: ROHS
- Package: SOT-23
Technical Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Drain-Source Voltage | BVDSS | 30 | V | ||
| Gate- Source Voltage | VGS | 12 | V | ||
| Drain Current (continuous) | ID | 5.8 | A | ||
| Drain Current (pulsed) | IDM | 30 | A | ||
| Total Device Dissipation (TA=25) | PD | 1400 | mW | ||
| Junction Temperature | TJ | 150 | |||
| Storage Temperature | Tstg | -55 | +150 | ||
| Drain-Source Breakdown Voltage (ID = 250uA,VGS=0V) | BVDSS | 30 | V | ||
| Gate Threshold Voltage (ID = 250uA,VGS= VDS) | VGS(th) | 0.7 | 1.4 | V | |
| Diode Forward Voltage Drop (IS= 1 A,VGS=0V) | VSD | 0.77 | 1 | V | |
| Zero Gate Voltage Drain Current (VGS=0V, VDS= 24V ) | IDSS | 1 | uA | ||
| Gate Body Leakage (VGS=+12V, VDS=0V) | IGSS | +100 | nA | ||
| Static Drain-Source On-State Resistance (ID= 5.8A,VGS= 10V ) | RDS(ON) | 29 | 32 | m | |
| Static Drain-Source On-State Resistance (ID= 5 A,VGS= 4.5 V) | RDS(ON) | 32 | 36 | m | |
| Static Drain-Source On-State Resistance (ID= 4 A,VGS= 2.5 V) | RDS(ON) | 40 | 52 | m | |
| Input Capacitance (VGS=0V, VDS= 15 V,f=1MHz) | CISS | 823 | pF | ||
| Output Capacitance (VGS=0V, VDS= 15 V,f=1MHz) | COSS | 99 | pF | ||
| Turn-ON Time (VDS= 15 V, RGEN=3, VGS=10V) | t(on) | 3.3 | ns | ||
| Turn-OFF Time (VDS= 15 V, RGEN=3, VGS=10V) | t(off) | 26.3 | ns |
Package Outline: SOT-23
Dimensions: (UNIT): mm
2410010103_BORN-AO3400A_C344010.pdf
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