General Purpose Audio Frequency Amplifier Transistor CBI MMBTSC2712 with SOT23 Plastic Package NPN Silicon
Key Attributes
Model Number:
MMBTSC2712
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
80MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
150mA
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-
Mfr. Part #:
MMBTSC2712
Package:
SOT-23
Product Description
Product Overview
The MMBTSC2712 is an NPN Silicon Epitaxial Planar Transistor designed for general-purpose audio frequency amplifier applications. It offers high voltage and current capabilities with VCEO up to 50V and IC up to 150mA. The transistor features high DC current gain (hFE ranging from 70 to 700), low noise with a typical NF of 1dB, and is housed in a small SOT-23 package. It is available in four groups (O, Y, G, L) categorized by their DC current gain.
Product Attributes
- Type: NPN Silicon Epitaxial Planar Transistor
- Application: Audio frequency general purpose amplifier
- Package: SOT-23 Plastic Package
Technical Specifications
| Symbol | Parameter | Group O | Group Y | Group G | Group L | Unit | |
|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25 C) | |||||||
| VCBO | Collector Base Voltage | 60 | V | ||||
| VCEO | Collector Emitter Voltage | 50 | V | ||||
| VEBO | Emitter Base Voltage | 5 | V | ||||
| IC | Collector Current | 150 | mA | ||||
| IB | Base Current | 30 | mA | ||||
| Ptot | Power Dissipation | 200 | mW | ||||
| Tj | Junction Temperature | 125 | C | ||||
| Ts | Storage Temperature Range | -55 to +125 | C | ||||
| Characteristics (Tamb = 25 C) | |||||||
| hFE | DC Current Gain (at VCE=6V, IC=2mA) | 70 | 120 | 200 | 350 | - | |
| - | - | - | - | 140 | |||
| - | - | - | - | 240 | |||
| - | - | - | - | 400 | |||
| - | - | - | - | 700 | |||
| ICBO | Collector Cutoff Current (at VCB=60V) | 0.1 | A | ||||
| IEBO | Emitter Cutoff Current (at VEB=5V) | 0.1 | A | ||||
| VCE(sat) | Collector Saturation Voltage (at IC=100mA, IB=10mA) | 0.25 | V | ||||
| fT | Transition Frequency (at VCE=10V, IC=1mA) | 80 | MHz | ||||
| Cob | Collector Output Capacitance (at VCB=10V, f=1MHz) | 2 to 3.5 | pF | ||||
| NF | Noise Figure (at VCE=6V, IC=0.1mA, f=1KHz, Rg=10K) | 1 to 10 | dB | ||||
2410121226_CBI-MMBTSC2712_C2919757.pdf
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