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quality 100V N channel MOSFET BORN BMO10N380 with low gate resistance and 100 percent UIS tested reliability factory
quality 100V N channel MOSFET BORN BMO10N380 with low gate resistance and 100 percent UIS tested reliability factory

100V N channel MOSFET BORN BMO10N380 with low gate resistance and 100 percent UIS tested reliability

Key Attributes
Model Number: BMO10N380
Product Custom Attributes
Mfr. Part #:
BMO10N380
Package:
PDFN-8(5x6)
Product Description

Product Overview

The BMO10N380 is a 100V N-channel MOSFET designed for power switching applications, motor control, and UPS systems. It features fast switching, low RDS(on), low gate charge, low gate resistance, and is 100% UIS tested. This MOSFET is available in a PDFN5*6 package.

Product Attributes

  • Brand: BMO
  • Product Type: N-channel MOSFET
  • Package: PDFN5*6
  • Marking: T043N10N
  • Delivery Mode: Tape and reel
  • Base Quantity: 5K

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Units
Absolute Maximum Ratings (TA=25 unless otherwise specified)
Drain-Source Voltage VDS 100 V
Gate - Source Voltage VGS 20 V
Drain Current ID TC=25 113 A
Drain Current ID TC=100 71 A
Drain Current-Pulse IDM 450 A
Single Pulse Avalanche Energy EAS 578 mJ
Power Dissipation PD TC=25 104 W
Junction Temperature(Max) TJ 150
Storage Temperature Tstg -55 to +150
Thermal Resistance from Junction to Case RJC 1.2 /W
Thermal Resistance, Junction to Ambient RJA 44 /W
Electrical Characteristics (TA=25 unless otherwise noted)
Gate Threshold Voltage VGS(TH) VGS = VDS , IDS=250uA 2 3 4 V
Static Drain-source On Resistance RDS(on) VGS=10V, ID=20A 3.5 4.3 m
Forward Transconductance gFS VDS=5V, ID=10A 48 S
Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID=250uA 100 V
Zero Gate Voltage Drain Current IDSS VDS = 100V, VGS=0V 1 uA
Gate- Source Leakage Current IGSS VGS = 20V, VDS=0V 100 nA
Diode Forward Voltage VSD VGS=0V,IS=2A 1.2 V
Reverse Recovery Time trr IF =20A, di/dt=100A/us 65 nS
Reverse Recovery Charge Qrr 138 nC
Input capacitance Ciss VDS =50V, VGS =0V, f = 1MHz 3055 pF
Output capacitance Coss 1378 pF
Reverse transfer capacitance Crss 19 pF
Gate Resistance Rg VGS = VDS=0V,f = 1MHz 1.6
Dynamic Characteristics
Turn-on delay time Td(on) VDD=50V, VGS=10V, ID =20A, RG =3 9.3 nS
Turn-on Rise time Tr 15
Turn -Off Delay Time Td(off) 29
Turn-Off Fall time Tf 19
Gate to Source Charge Qgs VDS=50V, VGS=10V, ID=20A 9.3 nC
Gate to Drain Charge Qg 44
Gate to Drain Charge Qgd 8.4

2511241925_BORN-BMO10N380_C52993701.pdf

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