Medium Power Amplifier Transistor Suitable For Electronics CBI 2SD1766U NPN Silicon Epitaxial Planar
Key Attributes
Model Number:
2SD1766U
Product Custom Attributes
Current - Collector Cutoff:
1uA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
500mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
2A
Collector - Emitter Voltage VCEO:
32V
Mfr. Part #:
2SD1766U
Package:
SOT-89
Product Description
Product Overview
This NPN Silicon Epitaxial Planar Transistor is designed for medium power amplification applications. It offers reliable performance with defined electrical characteristics and is suitable for various electronic circuits requiring amplification.
Product Attributes
- Type: NPN Silicon Epitaxial Planar Transistor
- Function: Medium power amplifier
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25 °C) | ||||
| Collector Base Voltage | VCBO | 40 | V | |
| Collector Emitter Voltage | VCEO | 32 | V | |
| Emitter Base Voltage | VEBO | 5 | V | |
| Collector Current | IC | 2 | A | |
| Peak Collector Current (Single pulse, Pw = 20 ms) | ICP | 2.5 | A | |
| Collector Power Dissipation | PC | 0.5 | W | 1) When mounted on a 40 X 40 X 0.7 mm ceramic board. |
| Junction Temperature | Tj | 150 | °C | |
| Storage Temperature Range | Tstg | - 55 to + 150 | °C | |
| Characteristics at Ta = 25 °C | ||||
| DC Current Gain at VCE = 3 V, IC = 500 mA | hFE (Group P) | 82 | - | - |
| hFE (Group Q) | 120 | 180 | - | |
| hFE (Group R) | 180 | 270 | 390 | |
| Collector Base Cutoff Current at VCB = 20 V | ICBO | - | - | 1 µA |
| Emitter Base Cutoff Current at VEB = 4 V | IEBO | - | - | 1 µA |
| Collector Base Breakdown Voltage at IC = 50 µA | V(BR)CBO | 40 | - | - V |
| Collector Emitter Breakdown Voltage at IC = 1 mA | V(BR)CEO | 32 | - | - V |
| Emitter Base Breakdown Voltage at IE = 50 µA | V(BR)EBO | 5 | - | - V |
| Collector Emitter Saturation Voltage at IC = 2 A, IB = 200 mA | VCE(sat) | - | - | 0.8 V |
| Transition Frequency at VCE = 5 V, -IE = 500 mA, f = 100 MHz | fT | - | 100 | - MHz |
| Collector Base Capacitance at VCB = 10 V, f = 1 MHz | Cob | - | 30 | - pF |
Package Outline: SOT-89
2410121503_CBI-2SD1766U_C5362135.pdf
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