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quality P Channel MOSFET 60V TO 252 Package Featuring Bruckewell MSD60P16 Ideal for Motor Drive Applications factory
quality P Channel MOSFET 60V TO 252 Package Featuring Bruckewell MSD60P16 Ideal for Motor Drive Applications factory

P Channel MOSFET 60V TO 252 Package Featuring Bruckewell MSD60P16 Ideal for Motor Drive Applications

Key Attributes
Model Number: MSD60P16
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
16A
RDS(on):
48mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
59pF
Output Capacitance(Coss):
87pF
Input Capacitance(Ciss):
1.256nF
Pd - Power Dissipation:
25W
Gate Charge(Qg):
22nC@10V
Mfr. Part #:
MSD60P16
Package:
TO-252
Product Description

Product Overview

The MSD60P16 is a high-performance P-Channel 60-V (D-S) MOSFET featuring extreme high cell density. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. It is suitable for applications such as Motor Drive, Power Tools, and LED Lighting.

Product Attributes

  • Brand: Bruckewell Technology Corporation
  • Product Line: MSD60P16
  • Type: P-Channel MOSFET
  • Voltage Rating: 60-V (D-S)
  • Package Type: TO-252
  • Certifications: RoHS Compliant, Green Device Available
  • Reliability: 100% EAS Guaranteed, Full Function Reliability Approved

Technical Specifications

Parameter Test Conditions Min. Typ. Max. Units
RDS(ON) VGS = -10V - 48 - m
RDS(ON) VGS = -10V, ID = -8A - 40 - m
RDS(ON) VGS = -4.5V, ID = -4A - 55 65 m
Gate Threshold Voltage (VGS(th)) VDS = VGS, ID = -250A -1.0 -1.7 -2.5 V
Drain-Source Breakdown Voltage (BVDSS) VGS = 0V, ID = -250A -60 - - V
Continuous Drain Current (ID) TC = 25C - - -16 A
Continuous Drain Current (ID) TC = 100C - - -10 A
Pulsed Drain Current (IDM) - - - -64 A
Single Pulse Avalanche Current (IAS) L = 0.1mH - - -32 A
Single Pulse Avalanche Energy (EAS) L = 0.1mH - - 51 mJ
Single Pulse Avalanche Energy (EAS) VDD = -25V, L = 0.1mH, IAS = -16A 12.8 - - mJ
Power Dissipation (PD) TC = 25C - - 25 W
Power Dissipation (PD) TA = 25C - - 2 W
Operating Junction and Storage Temperature (TJ/TSTG) - -55 - +150 C
Maximum Junction-to-Ambient Thermal Resistance (RJA) (1 inch FR-4 board, 2OZ copper) - - 62.5 C/W
Maximum Junction-to-Case Thermal Resistance (RJC) - - - 5 C/W
Total Gate Charge (Qg) VDS = -30V, ID = -8A, VGS = -10V - 22 - nC
Gate-Source Charge (Qgs) VDS = -30V, ID = -8A, VGS = -10V - 4.1 - nC
Gate-Drain Charge (Qgd) VDS = -30V, ID = -8A, VGS = -10V - 5.2 - nC
Input Capacitance (CISS) VDS = -30V, VGS = 0V, f = 1.0MHz - 1256 - pF
Output Capacitance (COSS) VDS = -30V, VGS = 0V, f = 1.0MHz - 87 - pF
Reverse Transfer Capacitance (CRSS) VDS = -30V, VGS = 0V, f = 1.0MHz - 59 - pF

Package Dimensions (TO-252):

REF Min. Nom. Max. REF Min. Nom. Max.
A 2.20 2.30 2.38 E1 4.40 - -
A1 0 - 0.127 e 2.286 BSC -
b 0.64 0.76 0.88 H 9.40 10.00 10.40
b2 0.77 0.84 1.14 L 1.40 1.52 1.77
b3 5.21 5.34 5.46 L1 2.743 Ref. -
c 0.45 0.50 0.60 L2 0.508 BSC -
c2 0.45 0.50 0.58 L3 0.89 - 1.27
D 6.00 6.10 6.223 L4 0.64 - 1.01
D1 5.21 - - L5 - - -
E 6.40 6.60 6.731 0 - 10

Packing & Order Information: 3,000/Reel

Marking: MSD60P16


2410121615_Bruckewell-MSD60P16_C22465587.pdf

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