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quality Trench P Channel MOSFET Bruckewell MSQ30P40D featuring low RDS ON and gate charge for power circuits factory
quality Trench P Channel MOSFET Bruckewell MSQ30P40D featuring low RDS ON and gate charge for power circuits factory

Trench P Channel MOSFET Bruckewell MSQ30P40D featuring low RDS ON and gate charge for power circuits

Key Attributes
Model Number: MSQ30P40D
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
6A
RDS(on):
40mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
142pF
Number:
2 P-Channel
Output Capacitance(Coss):
173pF
Input Capacitance(Ciss):
1.22nF@15V
Pd - Power Dissipation:
2.2W
Gate Charge(Qg):
11.4nC@4.5V
Mfr. Part #:
MSQ30P40D
Package:
SOP-8
Product Description

Product Overview

The MSQ30P40D is a high-performance trench P-channel MOSFET featuring extreme high cell density. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. Typical applications include MB, VGA, Vcore, POL applications, load switches, and LED applications.

Product Attributes

  • Brand: Bruckewell Technology Corporation
  • Product Type: Dual P-Channel MOSFET
  • Model: MSQ30P40D
  • Certifications: RoHS Compliant, Green Device Available
  • Package Type: SOP-8

Technical Specifications

Parameter Test Conditions Min. Typ. Max. Units
Absolute Maximum Ratings
VDS Drain-Source Voltage -30 V
VGS Gate-Source Voltage ±20 V
ID Continuous Drain Current (TA =25°C) -6 A
ID Continuous Drain Current (TA =70°C) -5 A
IDM Pulsed Drain Current -26 A
IAS Single Pulse Avalanche Current (L =0.1mH) -30 A
EAS Single Pulse Avalanche Energy (L =0.1mH) 45 mJ
PD Power Dissipation (TA =25°C) 2.2 W
TJ/TSTG Operating Junction and Storage Temperature -55 +150 °C
Thermal Resistance Ratings
RθJA Maximum Junction-to-Ambient 85 °C/W
RθJC Maximum Junction-to-Case 25 °C/W
Electrical Characteristics (TJ=25°C unless otherwise specified)
VGS (th) Gate Threshold Voltage VDS =VGS, ID =-250µA -1.0 -2.5 V
BVDSS Drain-Source Breakdown Voltage VGS =0V, ID =-250µA -30 V
gfs Forward Transconductance VDS =-5V, ID =-6A 17 S
IGSS Gate-Source Leakage Current VDS =0V, VGS =±20V ±100 nA
IDSS Drain-Source Leakage Current VDS =-24V, VGS =0V, TJ =25°C -1 µA
IDSS Drain-Source Leakage Current VDS =-24V, VGS =0V, TJ =55°C -10 µA
RDS (on) Drain-Source On-Resistance VGS =-10V, ID =-6A 30 mΩ
RDS (on) Drain-Source On-Resistance VGS =-4.5V, ID =-4A 40 mΩ
EAS Single Pulse Avalanche Energy VDD =-25V, IAS =-6A 5 mJ
VSD Diode Forward Voltage IS = -6A, VGS = 0, TJ =25°C -1.2 V
IS Continuous Source Current VG =VD =0V, Force Current -6 A
ISM Pulsed Source Current -26 A
Dynamic Characteristics
Qg Total Gate Charge VDS =-15V ID =-6A VGS =-4.5V 11.4 nC
Qgs Gate-Source Charge 4.4
Qgd Gate-Drain Charge 4.3
td(on) Turn-On Delay Time VDS =-15V ID =-6A VGS =-10V RG =3.3Ω 4.4 ns
tr Rise Time 14.6
td(off) Turn-Off Delay Time 40
tf Fall Time 19.3
CISS Input Capacitance VDS =-15V VGS =0V f =1.0MHz 1220 pF
COSS Output Capacitance 173
CRSS Reverse Transfer Capacitance 142
Rg Gate Resistance VDS =0V, VGS =0V, f =1.0MHz 13 Ω
Package Dimensions (mm)
Dimension Min. Max.
A 5.80 6.20
B 4.80 5.00
C 3.80 4.00
D 0° 8°
E 0.40 0.90
F 0.19 0.26
G 1.27 Typ.
H 0.35 0.51
J 0.40 Ref.
K 45° Ref.
L 1.35 1.75
M 0.10 0.25
Packing & Order Information
Quantity 3,000/Reel
Marking MSQ30P40D

2410121607_Bruckewell-MSQ30P40D_C22374932.pdf

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