60 Volt P Channel MOSFET Bruckewell MST26P11B Designed for Power Tools and LED Lighting Applications
Key Attributes
Model Number:
MST26P11B
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
2.4A
RDS(on):
220mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
38pF
Number:
1 P-Channel
Output Capacitance(Coss):
59pF
Input Capacitance(Ciss):
531pF
Pd - Power Dissipation:
1.1W
Gate Charge(Qg):
4.6nC@4.5V
Mfr. Part #:
MST26P11B
Package:
SOT-26
Product Description
Product Overview
The MST26P11B is a high-performance P-Channel Trench MOSFET designed with extreme cell density, offering excellent RDS(ON) and gate charge for small power switching and load switch applications. This device meets RoHS and Green Product requirements and has undergone full function reliability approval. It is suitable for applications such as Motor Drive, Power Tools, and LED Lighting.Product Attributes
- Brand: Bruckewell Technology Corporation
- Product Line: MST26P11B
- Technology: Advanced high cell density Trench technology
- Certifications: RoHS Compliant, Green Device Available
- Package Type: SOT-26
- Packing: 3,000/Reel
Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| General Specifications | ||
| P-Channel MOSFET | 60-V (D-S) | V |
| Super Low Gate Charge | ||
| Excellent CdV/dt effect decline | ||
| Absolute Maximum Ratings | ||
| Drain-Source Voltage (VDS) | -60 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) (TA =25°C) | -2.4 | A |
| Continuous Drain Current (ID) (TA =70°C) | -1.7 | A |
| Pulsed Drain Current (IDM) (TA =25°C) | -4.5 | A |
| Power Dissipation (PD) (TA =25°C) | 1.1 | W |
| Operating Junction and Storage Temperature (TJ/TSTG) | -55 to +150 | °C |
| Thermal Resistance Ratings | ||
| Maximum Junction-to-Ambient (RθJA) | 110 | °C/W |
| Electrical Characteristics (TJ =25°C unless otherwise specified) | ||
| Gate Threshold Voltage (VGS(th)) | -1.0 to -3.0 | V |
| Drain-Source Breakdown Voltage (BVDSS) | -60 | V |
| Forward Transconductance (gfs) | 5.8 | S |
| Gate-Source Leakage Current (IGSS) | ±100 | nA |
| Drain-Source Leakage Current (IDSS) (TJ =25°C) | -1 | µA |
| Drain-Source Leakage Current (IDSS) (TJ =55°C) | -5 | µA |
| Static Drain-Source On-Resistance (RDS(on)) (VGS =-10V, ID =-2A) | 175 | mΩ |
| Static Drain-Source On-Resistance (RDS(on)) (VGS =-4.5V, ID =-1A) | 220 | mΩ |
| Diode Forward Voltage (VSD) (IS =-1A) | -1.2 | V |
| Continuous Source Current (IS) | -2.4 | A |
| Pulsed Source Current (ISM) | -4.5 | A |
| Dynamic and Switching Characteristics | ||
| Total Gate Charge (Qg) | 4.6 | nC |
| Gate-Source Charge (Qgs) | 1.39 | nC |
| Gate-Drain Charge (Qgd) | 1.62 | nC |
| Turn-On Delay Time (td(on)) | 17.4 | ns |
| Rise Time (tr) | 5.4 | ns |
| Turn-Off Delay Time (td(off)) | 37.2 | ns |
| Fall Time (tf) | 2.4 | ns |
| Input Capacitance (CISS) | 531 | pF |
| Output Capacitance (COSS) | 59 | pF |
| Reverse Transfer Capacitance (CRSS) | 38 | pF |
| Package Dimensions (SOT-26) | ||
| Dimension A (Min) | 1.45 | Max |
| Dimension A1 (Ref) | 0 | 0.15 |
| Dimension A2 (Ref) | 0.90 | 1.30 |
| Dimension c (Ref) | 0.12 | |
| Dimension b (Ref) | 0.30 | 0.50 |
| Dimension D (Min) | 2.70 | 3.10 |
| Dimension E (Min) | 2.60 | 3.00 |
| Dimension E1 (Ref) | 1.40 | 1.80 |
| Dimension L (Ref) | 0.37 | |
| Dimension L1 (Ref) | 0.60 | |
| Dimension θ (Ref) | 0° | 10° |
| Dimension e (Ref) | 0.95 | |
| Dimension e1 (Ref) | 1.90 | |
2412061551_Bruckewell-MST26P11B_C42407753.pdf
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