High Cell Density Trench Technology N Channel MOSFET Bruckewell MS23N06A for Small Power Switching
Key Attributes
Model Number:
MS23N06A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
RDS(on):
35mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
70pF
Output Capacitance(Coss):
84pF
Pd - Power Dissipation:
1W
Input Capacitance(Ciss):
860pF
Gate Charge(Qg):
11.5nC@10V
Mfr. Part #:
MS23N06A
Package:
SOT-23
Product Description
Product Overview
The MS23N06A is a high-performance N-Channel MOSFET featuring advanced trench technology with extreme high cell density. It offers excellent RDS(ON) and low gate charge, making it ideal for various small power switching and load switch applications. This device meets RoHS and Green Product requirements and has passed full function reliability tests. Typical applications include battery protection, load switching, and use in hand-held instruments.
Product Attributes
- Brand: Bruckewell Technology Corporation
- Product Type: N-Channel MOSFET
- Technology: Advanced high cell density Trench technology
- Compliance: RoHS Compliant, Green Device Available
- Package Type: SOT-23
- Packing: 3,000/Reel
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 30 | V | |||
| VGS | Gate-Source Voltage | ±12 | V | |||
| ID | Continuous Drain Current (TA =25°C) | 5.8 | A | |||
| ID | Continuous Drain Current (TA =70°C) | 4.9 | A | |||
| IDM | Pulsed Drain Current2 (TA =25°C) | 20 | A | |||
| PD | Power Dissipation3 (TA =25°C) | 1 | W | |||
| TJ/TSTG | Operating Junction and Storage Temperature | -55 | +150 | °C | ||
| Thermal Resistance Ratings | ||||||
| RθJA | Maximum Junction-to-Ambient1 | 125 | °C/W | |||
| RθJA | Maximum Junction-to-Ambient1 (t ≤10s) | 85 | °C/W | |||
| Electrical Characteristics (TJ =25°C unless otherwise specified) | ||||||
| VGS (th) | Gate Threshold Voltage | VDS =VGS, ID =250µA | 0.5 | - | 1.2 | V |
| BVDSS | Drain-Source Breakdown Voltage | VGS =0V, ID =250µA | 30 | - | - | V |
| gfs | Forward Transconductance | VDS =5V, ID =5A | - | 25 | - | S |
| IGSS | Gate-Source Leakage Current | VDS =0V, VGS =±12V | - | - | ±100 | nA |
| IDSS | Drain-Source Leakage Current | VDS =24V, VGS =0V, TJ =25°C VDS =24V, VGS =0V, TJ =55°C | - | - | 1 5 | µA |
| RDS (on) | Static Drain-Source On-Resistance2 | VGS =10V, ID =5.0A VGS =4.5V, ID =5.0A VGS =2.5V, ID =2.6A | - | - | 30 35 50 | mΩ |
| VSD | Diode Forward Voltage2 | IS =1.2A, VGS =0V, TJ =25°C | - | - | 1.2 | V |
| IS | Continuous Source Current1,4(Diode) | VG =VD =0V, Force Current | - | - | 5.8 | A |
| Dynamic and switching Characteristics | ||||||
| Qg | Total Gate Charge | VDS =15V, ID =5.8A, VGS =4.5V | -- | 11.5 | -- | nC |
| Qgs | Gate-Source Charge | -- | 1.6 | -- | nC | |
| Qgd | Gate-Drain Charge | -- | 2.9 | -- | nC | |
| td(on) | Turn-On Delay Time | VDS =15V, ID =5A, VGS =10V, RG =3Ω | -- | 5 | -- | ns |
| tr | Rise Time | -- | 47 | -- | ns | |
| td(off) | Turn-Off Delay Time | -- | 26 | -- | ns | |
| tf | Fall Time | -- | 8 | -- | ns | |
| CISS | Input Capacitance | VDS =15V, VGS =0V, f =1.0MHz | -- | 860 | -- | pF |
| COSS | Output Capacitance | -- | 84 | -- | pF | |
| CRSS | Reverse Transfer Capacitance | -- | 70 | -- | pF | |
2410121628_Bruckewell-MS23N06A_C22465588.pdf
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