N Channel Enhancement Mode MOSFET BORN BSS138 Featuring Low On Resistance and 12V Gate Source Voltage
Key Attributes
Model Number:
BSS138
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
500mA
Operating Temperature -:
-
RDS(on):
1Ω@10V,0.5A
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
1.5pF@30V
Number:
1 N-channel
Input Capacitance(Ciss):
23pF@30V
Pd - Power Dissipation:
-
Gate Charge(Qg):
910pC@30V
Mfr. Part #:
BSS138
Package:
SOT-23
Product Description
Product Overview
The BSS138 is a high-performance N-Channel Enhancement-Mode MOSFET designed for various switching applications. It features low RDS(on) at 10V VGS, 3.3V logic level control, and is housed in a compact SOT23 package. This RoHS compliant component is ideal for LED lighting applications and ON/OFF switching in networking equipment.
Product Attributes
- Brand: BSS138 (Implied from datasheet context)
- Package Type: SOT23
- Compliance: PbFree, RoHS Compliant
- Transistor Type: N-Channel Enhancement-Mode MOSFET
Technical Specifications
| Parameter | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Gate-Source Voltage | (Common Ratings) | 12 | V | ||
| Drain-Source Breakdown Voltage (V(BR)DSS) | VGS=0V, ID=250A | 50 | V | ||
| Maximum Junction Temperature (TJ) | (Common Ratings) | 150 | C | ||
| Storage Temperature Range (TSTG) | (Common Ratings) | -50 | 150 | C | |
| Pulse Drain Current (ID) | TA=25C, Mounted on Large Heat Sink | 1.8 | A | ||
| Continuous Drain Current (ID) | TA=25C | 0.5 | A | ||
| Continuous Drain Current (ID) | TA=70C | 0.4 | A | ||
| Maximum Power Dissipation (PD) | TA=25C | 0.3 | W | ||
| Maximum Power Dissipation (PD) | TA=70C | 0.2 | W | ||
| Thermal Resistance Junction-Ambient (JA) | 400 | C/W | |||
| Zero Gate Voltage Drain Current (IDSS) | VDS=50V, VGS=0V (TA=25) | 1 | A | ||
| Zero Gate Voltage Drain Current (IDSS) | VDS=40V, VGS=0V (TA=125) | 100 | uA | ||
| Gate-Body Leakage Current (IGSS) | VGS=12V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage (VGS(TH)) | VDS=VGS, ID=250A | 0.6 | 1.0 | 1.5 | V |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=10V, ID=0.5A | 1.0 | 2 | ||
| Drain-Source On-State Resistance (RDS(ON)) | VGS=4.5V, ID=0.3A | 1.2 | 2.5 | ||
| Drain-Source On-State Resistance (RDS(ON)) | VGS=3.3V, ID=0.2A | 1.6 | 4 | ||
| Input Capacitance (Ciss) | VDS=30V, VGS=0V, f=1MHz | 23 | pF | ||
| Output Capacitance (Coss) | 3.8 | pF | |||
| Reverse Transfer Capacitance (Crss) | 1.5 | pF | |||
| Total Gate Charge (Qg) | VDS=30V, ID=0.5A, VGS=10V | 0.91 | nC | ||
| Gate Source Charge (Qgs) | 0.18 | nC | |||
| Gate Drain Charge (Qgd) | 0.3 | nC | |||
| Turn on Delay Time (td(on)) | VDD=30V, ID=0.3A, RG=3.3, VGS=10V | 6 | ns | ||
| Turn on Rise Time (tr) | 3.5 | ns | |||
| Turn Off Delay Time (td(off)) | 20 | ns | |||
| Turn Off Fall Time (tf) | 5.9 | ns | |||
| Source Drain Current (ISD) | Body Diode, TA=25 | 0.2 | A | ||
| Forward on voltage (VSD) | Tj=25, ISD=0.5A, VGS=0V | 0.78 | 1.2 | V |
Order Information
| Product | Package | Marking | Packing | Min Unit Quantity |
|---|---|---|---|---|
| BSS138 | SOT23 | KN | 3000PCS/Reel | 3000PCS |
2410121608_BORN-BSS138_C431507.pdf
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