Dual transistor NPN NPN type CBI EMX1 featuring SOT-563 package for compact and interference free operation

Key Attributes
Model Number: EMX1
Product Custom Attributes
Mfr. Part #:
EMX1
Package:
SOT-563
Product Description

Product Overview

The SOT-563 DUAL TRANSISTOR (NPN+NPN) is a plastic-encapsulated device featuring two independent 2SC2412K chips within a single SOT-563 package. This configuration eliminates interference between transistor elements and allows for mounting with standard SOT-563 automatic mounting machines, significantly reducing mounting costs and required board area. It is designed for applications requiring compact dual NPN transistor solutions.

Product Attributes

  • Type: Dual Transistor (NPN+NPN)
  • Package: SOT-563
  • Encapsulation: Plastic
  • Chip Type: 2SC2412K
  • Origin: Heyuan China Base Electronics Technology Co., Ltd.
  • Marking: X1

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Units
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 50 V
Emitter-Base Voltage VEBO 7 V
Collector Current - Continuous IC 150 mA
Collector Power Dissipation PC 150 mW
Operation Junction and Storage Temperature Range TJ, Tstg -55 +150
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
Collector-base breakdown voltage V(BR)CBO IC=50A, IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 50 V
Emitter-base breakdown voltage V(BR)EBO IE=50A, IC=0 7 V
Collector cut-off current ICBO VCB=60V, IE=0 0.1 A
Emitter cut-off current IEBO VEB=7V, IC=0 0.1 A
DC current gain hFE VCE=6V, IC=1mA 120 560
Collector-emitter saturation voltage VCE(sat) IC=50mA, IB=5mA 0.4 V
Transition frequency fT VCE=12V, IC=2mA, f=100MHz 180 MHz
Collector output capacitance Cob VCB=12V, IE=0, f=1MHz 2.0 3.5 pF

2510101615_CBI-EMX1_C51315360.pdf

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