Dual transistor NPN NPN type CBI EMX1 featuring SOT-563 package for compact and interference free operation
Product Overview
The SOT-563 DUAL TRANSISTOR (NPN+NPN) is a plastic-encapsulated device featuring two independent 2SC2412K chips within a single SOT-563 package. This configuration eliminates interference between transistor elements and allows for mounting with standard SOT-563 automatic mounting machines, significantly reducing mounting costs and required board area. It is designed for applications requiring compact dual NPN transistor solutions.
Product Attributes
- Type: Dual Transistor (NPN+NPN)
- Package: SOT-563
- Encapsulation: Plastic
- Chip Type: 2SC2412K
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
- Marking: X1
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| MAXIMUM RATINGS (Ta=25 unless otherwise noted) | ||||||
| Collector-Base Voltage | VCBO | 60 | V | |||
| Collector-Emitter Voltage | VCEO | 50 | V | |||
| Emitter-Base Voltage | VEBO | 7 | V | |||
| Collector Current - Continuous | IC | 150 | mA | |||
| Collector Power Dissipation | PC | 150 | mW | |||
| Operation Junction and Storage Temperature Range | TJ, Tstg | -55 | +150 | |||
| ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) | ||||||
| Collector-base breakdown voltage | V(BR)CBO | IC=50A, IE=0 | 60 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA, IB=0 | 50 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=50A, IC=0 | 7 | V | ||
| Collector cut-off current | ICBO | VCB=60V, IE=0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB=7V, IC=0 | 0.1 | A | ||
| DC current gain | hFE | VCE=6V, IC=1mA | 120 | 560 | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=50mA, IB=5mA | 0.4 | V | ||
| Transition frequency | fT | VCE=12V, IC=2mA, f=100MHz | 180 | MHz | ||
| Collector output capacitance | Cob | VCB=12V, IE=0, f=1MHz | 2.0 | 3.5 | pF | |
2510101615_CBI-EMX1_C51315360.pdf
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