Trench Technology N Channel MOSFET BORN BMDFN2302 with Low Threshold Voltage and Compact DFN1006 3L Package

Key Attributes
Model Number: BMDFN2302
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
710mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
220mΩ@4.5V,0.55A
Gate Threshold Voltage (Vgs(th)):
450mV
Reverse Transfer Capacitance (Crss@Vds):
8.3pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
50.6pF@10V
Pd - Power Dissipation:
670mW
Gate Charge(Qg):
870pC@4.5V
Mfr. Part #:
BMDFN2302
Package:
DFN1006-3L
Product Description

Product Overview

The BMDFN2302 is an N-Channel MOSFET featuring Trench Technology and a supper high-density cell design. It offers excellent ON resistance for higher DC current and an extremely low threshold voltage, making it suitable for small signal switching and small motor driver applications. The device is available in a compact DFN1006-3L package.

Product Attributes

  • Brand: Born-TW (implied from www.born-tw.com)
  • Technology: Trench Technology
  • Cell Design: Supper high density
  • Package Type: DFN1006-3L
  • Revision: 2018

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Absolute Maximum Ratings
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS ±5 V
Continuous Drain Current (a, d) ID TA=25°C 0.71 0.66 A
Continuous Drain Current (a, d) ID TA=70°C 0.57 0.52 A
Maximum Power Dissipation (a, d) PD TA=25°C 0.32 0.27 W
Maximum Power Dissipation (a, d) PD TA=70°C 0.20 0.17 W
Continuous Drain Current (b, d) ID TA=25°C 0.67 0.62 A
Continuous Drain Current (b, d) ID TA=70°C 0.54 0.50 A
Maximum Power Dissipation (b, d) PD TA=25°C 0.28 0.24 W
Maximum Power Dissipation (b, d) PD TA=70°C 0.18 0.15 W
Pulsed Drain Current (c) IDM 1.4 A
Operating Junction Temperature TJ 150 °C
Lead Temperature TL 260 °C
Storage Temperature Range Tstg -55 150 °C
Electrical Characteristics @TA=25°C unless otherwise noted
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250uA 20 V
Zero Gate Voltage Drain Current IDSS VDS =16 V, VGS = 0V 1 uA
Gate-to-source Leakage Current IGSS VDS = 0 V, VGS =±5V ±5 uA
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250uA 0.45 0.58 0.85 V
Drain-to-source On-resistance RDS(on) VGS = 4.5V, ID = 0.55A 220 420
Drain-to-source On-resistance RDS(on) VGS = 2.5V, ID = 0.45A 260 500
Drain-to-source On-resistance RDS(on) VGS = 1.8V, ID = 0.35A 315 600
Forward Transconductance gFS VDS = 5 V, ID = 0.55A 2.0 S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance CISS VGS = 0 V, f = 1 MHz, VDS = 10 V 50.6 pF
Output Capacitance COSS 13.2 pF
Reverse Transfer Capacitance CRSS 8.3 pF
Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 10 V, ID = 0.55A 0.87 nC
Threshold Gate Charge QG(TH) 0.06
Gate-to-Source Charge QGS 0.15
Gate-to-Drain Charge QGD 0.27
SWITCHING CHARACTERISTICS
Turn-On Delay Time td(ON) VGS = 4.5 V, VDS = 10V, ID =0.55A, RG=6 Ω 16 ns
Rise Time tr 11.6 ns
Turn-Off Delay Time td(OFF) 36 ns
Fall Time tf 11 ns
BODY DIODE CHARACTERISTICS
Forward Voltage VSD VGS = 0 V, IS = 0.35A 0.5 0.7 1.1 V
Thermal Resistance Ratings
Junction-to-Ambient Thermal Resistance (a) RθJA t ≤ 10 s Steady State 350 390 °C/W
Junction-to-Ambient Thermal Resistance (b) RθJA t ≤ 10 s Steady State 395 455 °C/W
Junction-to-Case Thermal Resistance (Steady State) RθJC 240 280 °C/W
Package Information
Package Type DFN1006-3L
Ordering Information
Order Code Package Base Qty Delivery Mode Marking
BMDFN2302 DFN1006-3L 10K Tape and reel M20

Package Dimensions (DFN1006-3L):

SYM DIMENSIONS (MILLIMETERS) MIN MAX
A 0.45 0.50
A1 0.00 0.02
b 0.45 0.50
b1 0.10 0.15
C 0.12 0.18
D 0.95 1.05
E 0.55 0.65
E1 0.15 0.25
L 0.20 0.30
L1 0.05 0.15
e 0.65 BSC

Suggested Land Pattern:

SYM DIMENSIONS (INCHES) DIMENSIONS (MILLIMETERS)
X 0.010 0.25
Y1 0.020 0.50
Y2 0.020 0.50
Y3 0.010 0.25
Z 0.008 0.20
C 0.024 0.65

2410121525_BORN-BMDFN2302_C5439978.pdf

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