Trench Technology N Channel MOSFET BORN BMDFN2302 with Low Threshold Voltage and Compact DFN1006 3L Package
Product Overview
The BMDFN2302 is an N-Channel MOSFET featuring Trench Technology and a supper high-density cell design. It offers excellent ON resistance for higher DC current and an extremely low threshold voltage, making it suitable for small signal switching and small motor driver applications. The device is available in a compact DFN1006-3L package.
Product Attributes
- Brand: Born-TW (implied from www.born-tw.com)
- Technology: Trench Technology
- Cell Design: Supper high density
- Package Type: DFN1006-3L
- Revision: 2018
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | ±5 | V | |||
| Continuous Drain Current (a, d) | ID | TA=25°C | 0.71 | 0.66 | A | |
| Continuous Drain Current (a, d) | ID | TA=70°C | 0.57 | 0.52 | A | |
| Maximum Power Dissipation (a, d) | PD | TA=25°C | 0.32 | 0.27 | W | |
| Maximum Power Dissipation (a, d) | PD | TA=70°C | 0.20 | 0.17 | W | |
| Continuous Drain Current (b, d) | ID | TA=25°C | 0.67 | 0.62 | A | |
| Continuous Drain Current (b, d) | ID | TA=70°C | 0.54 | 0.50 | A | |
| Maximum Power Dissipation (b, d) | PD | TA=25°C | 0.28 | 0.24 | W | |
| Maximum Power Dissipation (b, d) | PD | TA=70°C | 0.18 | 0.15 | W | |
| Pulsed Drain Current (c) | IDM | 1.4 | A | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Electrical Characteristics @TA=25°C unless otherwise noted | ||||||
| OFF CHARACTERISTICS | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS = 0 V, ID = 250uA | 20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =16 V, VGS = 0V | 1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS = 0 V, VGS =±5V | ±5 | uA | ||
| ON CHARACTERISTICS | ||||||
| Gate Threshold Voltage | VGS(TH) | VGS = VDS, ID = 250uA | 0.45 | 0.58 | 0.85 | V |
| Drain-to-source On-resistance | RDS(on) | VGS = 4.5V, ID = 0.55A | 220 | 420 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS = 2.5V, ID = 0.45A | 260 | 500 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS = 1.8V, ID = 0.35A | 315 | 600 | mΩ | |
| Forward Transconductance | gFS | VDS = 5 V, ID = 0.55A | 2.0 | S | ||
| CHARGES, CAPACITANCES AND GATE RESISTANCE | ||||||
| Input Capacitance | CISS | VGS = 0 V, f = 1 MHz, VDS = 10 V | 50.6 | pF | ||
| Output Capacitance | COSS | 13.2 | pF | |||
| Reverse Transfer Capacitance | CRSS | 8.3 | pF | |||
| Total Gate Charge | QG(TOT) | VGS = 4.5 V, VDS = 10 V, ID = 0.55A | 0.87 | nC | ||
| Threshold Gate Charge | QG(TH) | 0.06 | ||||
| Gate-to-Source Charge | QGS | 0.15 | ||||
| Gate-to-Drain Charge | QGD | 0.27 | ||||
| SWITCHING CHARACTERISTICS | ||||||
| Turn-On Delay Time | td(ON) | VGS = 4.5 V, VDS = 10V, ID =0.55A, RG=6 Ω | 16 | ns | ||
| Rise Time | tr | 11.6 | ns | |||
| Turn-Off Delay Time | td(OFF) | 36 | ns | |||
| Fall Time | tf | 11 | ns | |||
| BODY DIODE CHARACTERISTICS | ||||||
| Forward Voltage | VSD | VGS = 0 V, IS = 0.35A | 0.5 | 0.7 | 1.1 | V |
| Thermal Resistance Ratings | ||||||
| Junction-to-Ambient Thermal Resistance (a) | RθJA | t ≤ 10 s Steady State | 350 | 390 | °C/W | |
| Junction-to-Ambient Thermal Resistance (b) | RθJA | t ≤ 10 s Steady State | 395 | 455 | °C/W | |
| Junction-to-Case Thermal Resistance (Steady State) | RθJC | 240 | 280 | °C/W | ||
| Package Information | ||||||
| Package Type | DFN1006-3L | |||||
| Ordering Information | ||||||
| Order Code | Package | Base Qty | Delivery Mode | Marking | ||
| BMDFN2302 | DFN1006-3L | 10K | Tape and reel | M20 | ||
Package Dimensions (DFN1006-3L):
| SYM | DIMENSIONS (MILLIMETERS) | MIN | MAX |
|---|---|---|---|
| A | 0.45 | 0.50 | |
| A1 | 0.00 | 0.02 | |
| b | 0.45 | 0.50 | |
| b1 | 0.10 | 0.15 | |
| C | 0.12 | 0.18 | |
| D | 0.95 | 1.05 | |
| E | 0.55 | 0.65 | |
| E1 | 0.15 | 0.25 | |
| L | 0.20 | 0.30 | |
| L1 | 0.05 | 0.15 | |
| e | 0.65 BSC |
Suggested Land Pattern:
| SYM | DIMENSIONS (INCHES) | DIMENSIONS (MILLIMETERS) |
|---|---|---|
| X | 0.010 | 0.25 |
| Y1 | 0.020 | 0.50 |
| Y2 | 0.020 | 0.50 |
| Y3 | 0.010 | 0.25 |
| Z | 0.008 | 0.20 |
| C | 0.024 | 0.65 |
2410121525_BORN-BMDFN2302_C5439978.pdf
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