Power Amplification and Switching Dual Transistor CBI MMDT2227DW with Epitaxial Planar Die Construction
Key Attributes
Model Number:
MMDT2227DW
Product Custom Attributes
Current - Collector Cutoff:
10nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
NPN+PNP
Number:
1 NPN + 1 PNP
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
60V
Mfr. Part #:
MMDT2227DW
Package:
SOT-363
Product Description
Product Overview
This product is a plastic-encapsulated dual transistor, featuring one 2222A NPN and one 2907A PNP transistor in a single package. It is ideal for power amplification and switching applications. The device utilizes epitaxial planar die construction and is marked as K27 for the NPN type.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Package Type: SOT-363
- Construction: Epitaxial planar die
- Configuration: Dual Transistor (NPN + PNP)
Technical Specifications
NPN 2222A Transistor
| Parameter | Symbol | Test Conditions | Min | Max | Units |
|---|---|---|---|---|---|
| MAXIMUM RATINGS (Ta=25 unless otherwise noted) | |||||
| Collector-Base Voltage | VCBO | 75 | V | ||
| Collector-Emitter Voltage | VCEO | 40 | V | ||
| Emitter-Base Voltage | VEBO | 6 | V | ||
| Collector Current - Continuous | IC | 600 | mA | ||
| Collector Power Dissipation | PC | 200 | mW | ||
| Junction Temperature | TJ | 150 | |||
| Storage Temperature | Tstg | -55 | 150 | ||
| ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) | |||||
| Collector-base breakdown voltage | V(BR)CBO | IC= 10A, IE=0 | 75 | V | |
| Collector-emitter breakdown voltage | V(BR)CEO | IC= 10mA, IB=0 | 40 | V | |
| Emitter-base breakdown voltage | V(BR)EBO | IE=10A.IC=0 | 6 | V | |
| Collector cut-off current | ICBO | VCB= 60V, IE=0 | 10 | nA | |
| Collector cut-off current | ICEX | VCE= 60V,VEB(off)=3V | 10 | nA | |
| Emitter cut-off current | IEBO | VEB= 3 V, IC=0 | 10 | nA | |
| DC current gain | hFE(1) * | VCE=10V, IC= 0.1mA | 35 | ||
| hFE(2) * | VCE=10V, IC= 1mA | 50 | |||
| hFE(3) * | VCE=10V, IC= 10mA | 75 | |||
| hFE(4) * | VCE=10V, IC= 150mA | 100 | 300 | ||
| hFE(5) * | VCE=10V, IC= 500mA | 40 | |||
| Collector-emitter saturation voltage | VCE(sat)1 * | IC=150mA, IB= 15mA | 0.3 | V | |
| VCE(sat)2 * | IC=500mA, IB= 50mA | 1 | V | ||
| Base-emitter saturation voltage | VBE(sat)1 * | IC=150mA, IB=15mA | 0.6 | 1.2 | V |
| VBE(sat)2 * | IC=500mA, IB= 50mA | 2 | V | ||
| Transition frequency | fT | VCE=20V, IC= 20mA, f=100MHz | 300 | MHz | |
| Output Capacitance | Cob | VCB=10V, IE=0,f=1MHz | 8 | pF | |
| Input Capacitance | Cib | VEB=0.5V,IC= 0,f=1MHz | 25 | pF | |
| Noise Figure | NF | VCE=10V, IC=100A, f=1KHz,Rs=1K | 4 | dB | |
| Switching characteristics (VCC=30V, IC=150mA, VBE(off)=0.5V,IB1=15mA) | |||||
| Delay time | td | 10 | ns | ||
| Rise time | tr | 25 | ns | ||
| Storage time | tS | 225 | ns | ||
| Fall time | tf | 60 | ns | ||
PNP 2907A Transistor
| Parameter | Symbol | Test Conditions | Min | Max | Units |
|---|---|---|---|---|---|
| MAXIMUM RATINGS (Ta=25 unless otherwise noted) | |||||
| Collector-Base Voltage | VCBO | -60 | V | ||
| Collector-Emitter Voltage | VCEO | -60 | V | ||
| Emitter-Base Voltage | VEBO | -5 | V | ||
| Collector Current - Continuous | IC | -600 | mA | ||
| Collector Power Dissipation | PC | 200 | mW | ||
| Junction Temperature | TJ | 150 | |||
| Storage Temperature | Tstg | -55 | 150 | ||
| ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) | |||||
| Collector-base breakdown voltage | V(BR)CBO | IC= -10A, IE=0 | -60 | V | |
| Collector-emitter breakdown voltage | V(BR)CEO | IC= -10mA, IB=0 | -60 | V | |
| Emitter-base breakdown voltage | V(BR)EBO | IE=-10A, IC=0 | -5 | V | |
| Collector cut-off current | ICBO | VCB=-50V, IE=0 | -10 | nA | |
| Collector cut-off current | ICEX | VCE=-30V,VEB(off)=-0.5V | -50 | nA | |
| Emitter cut-off current | IEBO | VEB=-3V, IC=0 | -10 | nA | |
| DC current gain | hFE(1) * | VCE=-10V, IC= -0.1mA | 75 | ||
| hFE(2) * | VCE=-10V, IC= -1mA | 100 | |||
| hFE(3) * | VCE=-10V, IC=-10mA | 100 | |||
| hFE(4) * | VCE=-10V, IC= -150mA | 100 | 300 | ||
| Collector-emitter saturation voltage | VCE(sat)1 * | IC=-150mA, IB=-15mA | -0.4 | V | |
| VCE(sat)2 * | IC=-500mA, IB= -50mA | -1.6 | V | ||
| Base-emitter saturation voltage | VBE(sat)1 * | IC=-150mA, IB=-15mA | -1.3 | V | |
| VBE(sat)2 * | IC=-500mA, IB= -50mA | -2.6 | V | ||
| Transition frequency | fT | VCE=-20V, IC= -50mA,f=100MHz | 200 | MHz | |
| Output Capacitance | Cob | VCB=-10V, IE= 0,f=1MHz | 8 | pF | |
| Input Capacitance | Cib | VEB=-2V, IC= 0,f=1MHz | 30 | pF | |
| Switching characteristics (VCC=-30V,IC=-150mA, IB1=-15mA) | |||||
| Delay time | td | 10 | ns | ||
| Rise time | tr | 40 | ns | ||
| Storage time | ts | 225 | ns | ||
| Fall time | tf | 60 | ns | ||
2410121636_CBI-MMDT2227DW_C21714143.pdf
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