100 Volt Drain Source Voltage N Channel MOSFET Bruckewell MSB100N023 Designed for High Energy Pulse Applications
Key Attributes
Model Number:
MSB100N023
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
250A
RDS(on):
2.5mΩ@10V
Operating Temperature -:
-50℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
53pF@50V
Number:
1 N-channel
Pd - Power Dissipation:
278W
Input Capacitance(Ciss):
10.1nF@50V
Gate Charge(Qg):
192nC@10V
Mfr. Part #:
MSB100N023
Package:
TO-263
Product Description
Product Overview
The MSB100N023 is an N-Channel 100-V (D-S) MOSFET utilizing advanced trench DMOS technology. This technology is engineered to minimize RDS(ON), enhance switching performance, and provide robust high-energy pulse withstand capability in avalanche and commutation modes. It is well-suited for high-efficiency, fast-switching applications, including networking, load switching, synchronous rectification, and Battery Management System (BMS) applications.
Product Attributes
- Brand: Bruckewell Technology Corporation
- Device Type: N-Channel MOSFET
- Technology: Trench DMOS
- Certifications: RoHS Compliant
- Availability: Green Device Available
Technical Specifications
| Parameter | Value | Units | Conditions |
|---|---|---|---|
| Drain-Source Voltage (VDS) | 100 | V | |
| Gate-Source Voltage (VGS) | ±20 | V | |
| Continuous Drain Current (ID) (TC =25°C) | 250 | A | |
| Continuous Drain Current (ID) (TC =100°C) | 158 | A | |
| Pulsed Drain Current (IDM) | 1000 | A | 1, 2 |
| Single Pulse Avalanche Current (IAS) (L =0.1mH) | 137 | A | 3 |
| Single Pulse Avalanche Energy (EAS) (L =0.1mH) | 938 | mJ | 3 |
| Power Dissipation (PD) (TC =25°C) | 278 | W | 4 |
| Power Dissipation (PD) (TA =25°C) | 2 | W | 4 |
| Operating Junction and Storage Temperature (TJ/TSTG) | -50 to +150 | °C | |
| Maximum Junction-to-Ambient Thermal Resistance (RθJA) | 62.5 | °C/W | 1 |
| Maximum Junction-to-Case Thermal Resistance (RθJC) | 0.45 | °C/W | 1 |
| Gate Threshold Voltage (VGS(th)) | 2.5 | V | VDS =VGS, ID =250µA |
| Drain-Source Breakdown Voltage (BVDSS) | 100 | V | VGS =0V, ID =250µA |
| Forward Transconductance (gfs) | 20 | S | VDS =10V, ID =3A |
| Gate-Source Leakage Current (IGSS) | 100 | nA | VDS =0V, VGS =20V |
| Drain-Source Leakage Current (IDSS) (TJ =25°C) | 1 | µA | VDS =100V, VGS =0V |
| Drain-Source Leakage Current (IDSS) (TJ =85°C) | 10 | µA | VDS =80V, VGS =0V |
| Static Drain-Source On-Resistance (RDS(on)) | 2.5 | mΩ | VGS =10V, ID =40A |
| Static Drain-Source On-Resistance (RDS(on)) | 1.9 | mΩ | VGS =10V, ID =40A (Typ.) |
| Single Pulse Avalanche Energy (EAS) | 180 | mJ | VDD =50V, L =0.1mH, IAS =60A 5 |
| Diode Forward Voltage (VSD) | 1 | V | IS =1A, VGS =0V, TJ =25°C 2 |
| Continuous Source Current (IS) | 250 | A | VG =VD =0V, Force Current 1, 6 |
| Pulsed Source Current (ISM) | 500 | A | 2, 6 |
| Total Gate Charge (Qg) | 192 | nC | VDS =50V, ID =100A, VGS =10V 2 |
| Gate-Source Charge (Qgs) | 18.5 | nC | |
| Gate-Drain Charge (Qgd) | 28.3 | nC | |
| Turn-On Delay Time (td(on)) | 20.6 | ns | VDS =50V, ID =100A, VGS =10V, RG =3.3Ω 2 |
| Rise Time (tr) | 19.8 | ns | |
| Turn-Off Delay Time (td(off)) | 66 | ns | |
| Fall Time (tf) | 117 | ns | |
| Input Capacitance (CISS) | 10100 | pF | VDS =50V, VGS =0V, f =1.0MHz |
| Output Capacitance (COSS) | 2020 | pF | |
| Reverse Transfer Capacitance (CRSS) | 53 | pF | |
| Gate Resistance (Rg) | 1.1 | Ω | VGS =VDS =0V, f =1.0MHz |
Notes:
- 1. Data tested by surface mounted on a 1 inch² FR-4 board with 2OZ copper.
- 2. Data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.
- 3. EAS data shows maximum rating. Test condition: VDD=50V, VGS=10V, L=0.1mH, IAS=60A.
- 4. Power dissipation is limited by 150°C junction temperature.
- 5. Min. value is 100% EAS tested guarantee.
- 6. Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.
2410121447_Bruckewell-MSB100N023_C22374936.pdf
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