NPN Transistor CBI S9013 with SOT23 Package Offering Performance and Excellent hFE Linearity
Key Attributes
Model Number:
S9013
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
150MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-
Mfr. Part #:
S9013
Package:
SOT-23
Product Description
Product Overview
The S9013 is an NPN transistor designed for general-purpose applications. It is complementary to the S9012 transistor and offers excellent hFE linearity. This transistor is housed in a plastic surface-mounted SOT-23 package with 3 leads.
Product Attributes
- Complementary to S9012
- Excellent hFE linearity
- MARKING: J3
- Package: SOT-23 (Plastic surface mounted package; 3 leads)
Technical Specifications
| Symbol | Parameter | Test Conditions | MIN | TYP | MAX | Units |
|---|---|---|---|---|---|---|
| MAXIMUM RATINGS (TA=25 unless otherwise noted) | ||||||
| VCBO | Collector-Base Voltage | 40 | V | |||
| VCEO | Collector-Emitter Voltage | 25 | V | |||
| VEBO | Emitter-Base Voltage | 5 | V | |||
| IC | Collector Current -Continuous | 500 | mA | |||
| PC | Collector Power Dissipation | 300 | mW | |||
| Tj | Junction Temperature | 150 | ||||
| Tstg | Storage Temperature | -55 | 150 | |||
| ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) | ||||||
| V(BR)CBO | Collector-base breakdown voltage | IC= 100A, IE=0 | 40 | V | ||
| V(BR)CEO | Collector-emitter breakdown voltage | IC= 0.1mA, IB=0 | 25 | V | ||
| V(BR)EBO | Emitter-base breakdown voltage | IE=100A, IC=0 | 5 | V | ||
| ICBO | Collector cut-off current | VCB=40V, IE=0 | 0.1 | A | ||
| ICEO | Collector cut-off current | VCE=20V, IB=0 | 0.1 | A | ||
| IEBO | Emitter cut-off current | VEB= 5V, IC=0 | 0.1 | A | ||
| hFE(1) | DC current gain | VCE=1V, IC= 50mA | 120 | 200 | ||
| hFE(2) | VCE=1V, IC=500mA | 40 | ||||
| VCE(sat) | Collector-emitter saturation voltage | IC=500mA, IB= 50mA | 0.6 | V | ||
| VBE(sat) | Base-emitter saturation voltage | IC=500mA, IB= 50mA | 1.2 | V | ||
| fT | Transition frequency | VCE=6V, IC= 20mA, f=30MHz | 150 | MHz | ||
2410121248_CBI-S9013_C2836092.pdf
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