Small size NPN transistor CBI MMBT3904T with excellent current gain and breakdown voltage parameters
Key Attributes
Model Number:
MMBT3904T
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
300MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-
Mfr. Part #:
MMBT3904T
Package:
SOT-523
Product Description
Product Overview
The MMBT3904T is an NPN transistor in a SOT-523 plastic-encapsulated package. It serves as a complementary component to the MMBT3906T and is designed for applications requiring small package size. This transistor offers various electrical characteristics including breakdown voltages, cut-off currents, DC current gain (hFE) across different collector currents, saturation voltages, and transition frequency, making it suitable for general-purpose electronic circuits.
Product Attributes
- Package Type: SOT-523
- Transistor Type: NPN
- Marking: 1N
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | IC=10A, IE=0 | 60 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA, IB=0 | 40 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=10A, IC=0 | 6 | V | ||
| Collector cut-off current | ICEX | VCE=30V, VEB(off)=3V | 50 | nA | ||
| Emitter cut-off current | IEBO | VEB=5V, IC=0 | 100 | nA | ||
| DC current gain | hFE(1) | VCE=1V, IC=0.1mA | 40 | |||
| hFE(2) | VCE=1V, IC=1mA | 70 | ||||
| hFE(3) | VCE=1V, IC=10mA | 100 | 300 | |||
| hFE(4) | VCE=1V, IC=50mA | 60 | ||||
| Collector-emitter saturation voltage | VCE(sat) | IC=10mA, IB=1mA | 0.2 | V | ||
| VCE(sat) | IC=50mA, IB=5mA | 0.3 | V | |||
| Collector-emitter saturation voltage | VBE(sat) | IC=10mA, IB=1mA | 0.65 | 0.85 | V | |
| VBE(sat) | IC=50mA, IB=5mA | 0.95 | V | |||
| Transition frequency | fT | VCE=20V,IC=10mA, f=100MHz | 300 | MHz | ||
| Collector output capacitance | Cob | VCB=5V, IE=0, f=1MHz | 4 | pF | ||
| Base input capacitance | Cib | VEB=0.5V, IC=0, f=1MHz | 8 | pF | ||
| Delay time | td | VCC=3V, VBE(off)=-0.5V IC=10mA, IB1=1mA | 35 | ns | ||
| Rise time | tr | VCC=3V, VBE(off)=-0.5V IC=10mA, IB1=1mA | 35 | ns | ||
| Storage time | ts | VCC=3V, IC=10mA, IB1= IB2=1mA | 200 | ns | ||
| Fall time | tf | VCC=3V, IC=10mA, IB1= IB2=1mA | 50 | ns |
| Parameter | Value | Unit | |
|---|---|---|---|
| Collector-Base Voltage | VCBO | 60 | V |
| Collector-Emitter Voltage | VCEO | 40 | V |
| Emitter-Base Voltage | VEBO | 6 | V |
| Collector Current | IC | 200 | mA |
| Collector Power Dissipation | PC | 150 | mW |
| Thermal Resistance Junction To Ambient | RJA | 833 | /W |
| Junction Temperature | Tj | 150 | |
| Storage Temperature | Tstg | -55+150 |
Pinout: 1. BASE, 2. EMITTER, 3. COLLECTOR
2105241831_CBI-MMBT3904T_C2828443.pdf
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