High current gain NPN transistor CBI BC817-40W with low collector-emitter voltage in SOT-323 package
Key Attributes
Model Number:
BC817-40W
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Mfr. Part #:
BC817-40W
Package:
SOT-323
Product Description
Product Overview
This NPN transistor, housed in a SOT-323 package, is designed for general AF applications. It offers high collector current capabilities, high current gain, and a low collector-emitter saturation voltage. Key features include a high collector current of up to 0.5 A and a high current gain (hFE) ranging from 100 to 600. It is suitable for applications requiring efficient amplification and switching at audio frequencies.
Product Attributes
- Package Type: SOT-323
- Transistor Type: NPN
- Pinout: 1. BASE, 2. EMITTER, 3. COLLECTOR
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | (Ta=25 unless otherwise noted) | 50 | V | ||
| Collector-Emitter Voltage | VCEO | (Ta=25 unless otherwise noted) | 45 | V | ||
| Emitter-Base Voltage | VEBO | (Ta=25 unless otherwise noted) | 5 | V | ||
| Collector Current - Continuous | IC | (Ta=25 unless otherwise noted) | 0.5 | A | ||
| Collector Dissipation | PC | (Ta=25 unless otherwise noted) | 0.2 | W | ||
| Thermal Resistance Junction to Ambient | RJA | (Ta=25 unless otherwise noted) | 625 | /W | ||
| Junction Temperature | Tj | (Ta=25 unless otherwise noted) | 150 | |||
| Storage Temperature | Tstg | (Ta=25 unless otherwise noted) | -55 | +150 | ||
| Collector-base breakdown voltage | V(BR)CBO | IC=10A,IE=0 | 50 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=10mA,IB=0 | 45 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=1A,IC=0 | 5 | V | ||
| Collector cut-off current | ICBO | VCB=20V,IE=0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB=5V,IC=0 | 0.1 | A | ||
| DC current gain | hFE(1) | VCE=1V,IC=100mA | 100 | 600 | ||
| DC current gain | hFE(2) | VCE=1V,IC=500mA | 40 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC=500mA,IB=50mA | 0.7 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=500mA,IB=50mA | 1.2 | V | ||
| Base-emitter voltage | VBE(ON) | VCE=1V,IC=500mA | 1.2 | V | ||
| Transition frequency | fT | VCE=5V,IC=10mA,f=100MHz | 100 | MHz | ||
| Collector output capacitance | Cob | VCB=10V,f=1MHz | 5 | pF |
hFE Classification
| Rank | Range | Marking |
|---|---|---|
| BC817-16W | 100-250 | 6A |
| BC817-25W | 160-400 | 6B |
| BC817-40W | 250-600 | 6C |
2410121447_CBI-BC817-40W_C21714271.pdf
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