Dual Transistor Component Including NPN and PNP Types CBI BC847PN Suitable for Electronic Applications
Key Attributes
Model Number:
BC847PN
Product Custom Attributes
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
100MHz
Type:
NPN+PNP
Number:
1 NPN + 1 PNP
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-
Mfr. Part #:
BC847PN
Package:
SOT-363
Product Description
Product Overview
This product is a plastic-encapsulated dual transistor package containing two isolated NPN and PNP transistors. It is designed for various electronic applications requiring complementary transistor functions within a single component. The device features epitaxial die construction and is available in a SOT-363 package.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Package Type: SOT-363
- Transistor Configuration: Dual Transistor (NPN + PNP)
- Model Numbers: BC847W+BC857W (implied as the specific components within the dual package)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| TR1 (NPN Transistor) | ||||||
| Collector-base breakdown voltage | V(BR)CBO | IC=10A, IE=0 | 50 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=10mA, IB=0 | 45 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=1A, IC=0 | 6 | V | ||
| Collector cut-off current | ICBO | VCB=30V, IE=0 | 15 | nA | ||
| Emitter cut-off current | IEBO | VEB=5V, IC=0 | 15 | nA | ||
| DC current gain | hFE | VCE=5V, IC=2mA | 200 | 450 | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=10mA, IB=0.5mA | 0.25 | V | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=100mA, IB=5mA | 0.6 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=10mA, IB=0.5mA | 0.7 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=100mA, IB=5mA | 0.9 | V | ||
| Base-emitter voltage | VBE(on) | VCE=5V, IC=2mA | 0.58 | 0.7 | V | |
| Base-emitter voltage | VBE(on) | VCE=5V, IC=10mA | 0.72 | V | ||
| Collector output capacitance | Cob | VCB=10V, IE=0, f=1MHz | 6.0 | pF | ||
| Transition frequency | fT | VCE=5V, IC=10mA, f=100MHz | 100 | MHz | ||
| Noise figure | NF | VCE=5V, Ic=0.2mA, f=1kHz, Rg=2K, f=200Hz | 10 | dB | ||
| Maximum Ratings for TR1 | ||||||
| Collector-Base Voltage | VCBO | 50 | V | |||
| Collector-Emitter Voltage | VCEO | 45 | V | |||
| Emitter-Base Voltage | VEBO | 6 | V | |||
| Collector Current Continuous | IC | 0.1 | A | |||
| Collector Power Dissipation | PC | 200 | mW | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -55 | 150 | |||
| TR2 (PNP Transistor) | ||||||
| Collector-base breakdown voltage | V(BR)CBO | IC=-10A, IE=0 | -50 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=-10mA, IB=0 | -45 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-1A, IC=0 | -5 | V | ||
| Collector cut-off current | ICBO | VCB=-30V, IE=0 | -15 | nA | ||
| Emitter cut-off current | IEBO | VEB=-5V, IC=0 | -15 | nA | ||
| DC current gain | hFE1 | VCE=-5V, IC=-2mA | 220 | 475 | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=-10mA, IB=-0.5mA | -0.3 | V | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=-100mA, IB=-5mA | -0.65 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=-10mA, IB=-0.5mA | -0.7 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=-100mA, IB=-5mA | -0.95 | V | ||
| Base-emitter voltage | VBE(on) | VCE=-5V, IC=-2mA | -0.6 | -0.75 | V | |
| Base-emitter voltage | VBE(on) | VCE=-5V, IC=-10mA | -0.82 | V | ||
| Collector output capacitance | Cob | VCB=-10V, IE=0, f=1MHz | 4.5 | pF | ||
| Transition frequency | fT | VCE=-5V, IC=-10mA, f=100MHz | 100 | MHz | ||
| Noise figure | NF | VCE=-5V, Ic=-0.2mA, f=1kHz, Rg=2K, f=200Hz | 10 | dB | ||
| Maximum Ratings for TR2 | ||||||
| Collector-Base Voltage | VCBO | -50 | V | |||
| Collector-Emitter Voltage | VCEO | -45 | V | |||
| Emitter-Base Voltage | VEBO | -5 | V | |||
| Collector Current Continuous | IC | -0.1 | A | |||
| Collector Power Dissipation | PC* | 200 | mW | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -55 | 150 | |||
2410121502_CBI-BC847PN_C2919796.pdf
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