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quality High Collector Current NPN Darlington Transistors CBI MMBTA28 Suitable for Electronic Circuit Design factory
quality High Collector Current NPN Darlington Transistors CBI MMBTA28 Suitable for Electronic Circuit Design factory
quality High Collector Current NPN Darlington Transistors CBI MMBTA28 Suitable for Electronic Circuit Design factory
quality High Collector Current NPN Darlington Transistors CBI MMBTA28 Suitable for Electronic Circuit Design factory

High Collector Current NPN Darlington Transistors CBI MMBTA28 Suitable for Electronic Circuit Design

Key Attributes
Model Number: MMBTA28
Product Custom Attributes
Mfr. Part #:
MMBTA28
Package:
SOT-23
Product Description

Product Overview

This document details NPN Darlington Transistors, manufactured by Heyuan China Base Electronics Technology Co., Ltd. These transistors are designed for high current gain applications. Key features include a high collector current rating and a wide operating temperature range. They are suitable for various electronic applications requiring efficient current amplification.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Product Type: NPN Darlington Transistors
  • Marking Code: 3SS

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
Collector-Base Voltage VCBO 80 V
Collector-Emitter Voltage VCEO 80 V
Emitter-Base Voltage VEBO 12 V
Collector Current IC 500 mA
Collector Power Dissipation PC 200 mW
Thermal Resistance From Junction To Ambient RJA 625 /W
Operation Junction and Storage Temperature Range TJ,Tstg -55 +150
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
Collector-base breakdown voltage V(BR)CBO IC=100A, IE=0 80 V
Collector-emitter sustain voltage VCEO(sus) IC=100A, VBE=0 80 V
Emitter-base breakdown voltage V(BR)EBO IE=10A, IC=0 12 V
Collector cut-off current ICBO VCB=60V, IE=0 0.1 A
Collector cut-off current ICES VCE=60V, VBE=0 0.5 A
Emitter cut-off current IEBO VEB=10V, IC=0 0.1 A
DC current gain hFE(1) * VCE=5V, IC=10mA 10 K
DC current gain hFE(2) * VCE=5V, IC=100mA 10 K
Collector-emitter saturation voltage VCE(sat)1* IC=10mA, IB=0.01mA 1.2 V
Collector-emitter saturation voltage VCE(sat)2* IC=100mA, IB=0.1mA 1.5 V
Base-emitter voltage VBE* VCE=5V, IC=100mA 2 V
Collector output capacitance Cob VCB=1V, IE=0, f=1MHz 8 pF
Transition frequency fT VCE=5V,IC=10mA, f=100MHz 125 MHz
*Pulse test: pulse width 300s, duty cycle 2.0%.
Package Type Pin 1 Pin 2 Pin 3
SOT23 BASE EMITTER COLLECTOR

2510101615_CBI-MMBTA28_C51315431.pdf

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