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quality P channel MOSFET Bruckewell MST26P05 designed for load switch and small power switching uses factory
quality P channel MOSFET Bruckewell MST26P05 designed for load switch and small power switching uses factory

P channel MOSFET Bruckewell MST26P05 designed for load switch and small power switching uses

Key Attributes
Model Number: MST26P05
Product Custom Attributes
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
4.3A
RDS(on):
75mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
80pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
583pF@15V
Pd - Power Dissipation:
1.1W
Gate Charge(Qg):
6.4nC@4.5V
Mfr. Part #:
MST26P05
Package:
SOT-26
Product Description

Product Overview

The MST26P05 is a high-performance P-channel MOSFET featuring advanced trench technology with extreme high cell density. It offers excellent RDS(ON) and low gate charge, making it ideal for various small power switching and load switch applications. This device meets RoHS and Green Product requirements and has undergone full function reliability approval. Its typical applications include notebooks, load switches, and hand-held instruments.

Product Attributes

  • Brand: Bruckewell Technology Corporation
  • Product Type: P-Channel MOSFET
  • Model: MST26P05
  • Certifications: RoHS Compliant, Green Device Available
  • Package Type: SOT-26
  • Packing: 3,000/Reel

Technical Specifications

Symbol Parameter Test Conditions Min. Typ. Max. Units
VDS Drain-Source Voltage -30 V
VGS Gate-Source Voltage ±20 V
ID Continuous Drain Current1 (TA =25°C) -4.3 A
ID Continuous Drain Current1 (TA =70°C) -3.5 A
IDM Pulsed Drain Current2 (TA =25°C) -16 A
PD Power Dissipation3 (TA =25°C) 1.1 W
TJ/TSTG Operating Junction and Storage Temperature -55 +150 °C
RθJA Maximum Junction-to-Ambient1 110 °C/W
VGS (th) Gate Threshold Voltage VDS =VGS, ID =-250µA -1.0 -2.5 V
BVDSS Drain-Source Breakdown Voltage VGS =0V, ID =-250µA -30 V
gfs Forward Transconductance VDS =-5V, ID =-3.0A 11 S
IGSS Gate-Source Leakage Current VDS =0V, VGS =±20V ±100 nA
IDSS Drain-Source Leakage Current VDS =-24V, VGS =0V, TJ =25°C
VDS =-24V, VGS =0V, TJ =55°C		 -1
-5		 µA
RDS (on) Static Drain-Source On-Resistance2 VGS =-10V, ID =-4.0A
VGS =-4.5V, ID =-3.0A		 52
75		 mΩ
VSD Diode Forward Voltage2 IS =-1.6A, VGS =0V, TJ =25°C -1.2 V
IS Continuous Source Current1,4 (Diode) -4.3 A
ISM Pulsed Source Current2,4 (Diode) VG =VD =0V, Force Current -16 A
Qg Total Gate Charge2 6.4 nC
Qgs Gate-Source Charge 2.3 nC
Qgd Gate-Drain Charge VDS =-15V ID =-3.0A
VGS =-4.5V		 1.9 nC
td(on) Turn-On Delay Time2 2.8 ns
tr Rise Time 8.4 ns
td(off) Turn-Off Delay Time 39 ns
tf Fall Time VDS =-15V ID =-3.0A
VGS =-10V RG =3.3Ω		 6 ns
CISS Input Capacitance 583 pF
COSS Output Capacitance 100 pF
CRSS Reverse Transfer Capacitance VDS =-15V VGS =0V f =1.0MHz 80 pF

Notes:

  • 1. Surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
  • 2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.
  • 3. The power dissipation is limited by 150°C junction temperature.
  • 4. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.

2412061551_Bruckewell-MST26P05_C42407752.pdf

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