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quality NPN Silicon Epitaxial Planar Transistor with High Static Forward Current Transfer Ratio CBI FMMT491 factory
quality NPN Silicon Epitaxial Planar Transistor with High Static Forward Current Transfer Ratio CBI FMMT491 factory

NPN Silicon Epitaxial Planar Transistor with High Static Forward Current Transfer Ratio CBI FMMT491

Key Attributes
Model Number: FMMT491
Product Custom Attributes
Mfr. Part #:
FMMT491
Package:
SOT-23
Product Description

Product Overview

This NPN Silicon Epitaxial Planar Transistor is designed for various electronic applications. It offers a Collector-Emitter Voltage (VCEO) of up to 60V and a Continuous Collector Current (IC) of 1A, with a Peak Pulse Current (ICM) of 2A. The device features a high Static Forward Current Transfer Ratio (hFE) and is suitable for operation within a wide temperature range of -55 to +150. It also exhibits robust ESD protection, withstanding up to 4,000V on the Human Body Model.

Product Attributes

  • Type: NPN Silicon Epitaxial Planar Transistor
  • Origin: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

Characteristic Symbol Value Unit Test Condition
Absolute Maximum Ratings (Ta = 25)
Collector-Base Voltage VCBO 80 V
Collector-Emitter Voltage VCEO 60 V
Emitter-Base Voltage VEBO 7 V
Continuous Collector Current IC 1 A
Peak Pulse Current ICM 2 A
Base Current IB 200 mA
Thermal Characteristics (Ta = 25)
Power Dissipation (Note 5) PD 500 mW
Thermal Resistance, Junction to Ambient (Note 5) RJA 250 C / W
Thermal Resistance, Junction to Lead (Note 6) RJL 197 C / W
Operating and Storage Temperature Range TJ, TSTG -55 to +150
ESD Ratings
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V JEDEC Class 3A
Electrostatic Discharge - Machine Model ESD MM 400 V
Characteristics at Ta= 25
Collector-Base Breakdown Voltage BVCBO 80 V IC = 100A
Collector-Emitter Breakdown Voltage (Note 8) BVCEO 60 V IC = 10mA
Emitter-Base Breakdown Voltage BVEBO 7 (Typ 8.1) V IE = 100A
Collector Cutoff Current ICBO <1 to 100 nA VCB = 60V
Emitter Cutoff Current IEBO <1 to 100 nA VEB = 5.6V
Collector Emitter Cutoff Current ICES <1 to 100 nA VCE = 60V, VCES = 60V
Static Forward Current Transfer Ratio (Note 8) hFE 100 (Typ 140) IC = 1mA, VCE = 5V
100 to 300 IC = 500mA, VCE = 5V
80 to 120 IC = 1A, VCE = 5V
30 to 40 IC = 2A, VCE = 5V
Collector-Emitter Saturation Voltage (Note 8) VCE(sat) 100 to 150 mV IC = 500mA, IB = 50mA
160 to 250 mV IC = 1A, IB = 100mA
Base-Emitter Turn-On Voltage (Note 8) VBE(on) 830 to 1000 mV IC = 1A, VCE = 5V
Base-Emitter Saturation Voltage (Note 8) VBE(sat) 965 to 1100 mV IC = 1A, IB = 100mA
Output Capacitance Cobo to 10 pF VCB = 10V, f = 1MHz
Transition Frequency fT 150 MHz VCE = 10V, IC = 50mA, f = 100MHz

2510101615_CBI-FMMT491_C51315365.pdf

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