PNP Plastic Encapsulated Transistor CBI BC860CW Suitable for Switching and AF Amplifier Applications
Key Attributes
Model Number:
BC860CW
Product Custom Attributes
Mfr. Part #:
BC860CW
Package:
SOT-323
Product Description
Product Overview
These PNP plastic-encapsulated transistors are ideally suited for automatic insertion and are designed for switching and AF amplifier applications. They offer reliable performance in various electronic circuits.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Product Type: Transistor (PNP)
- Encapsulation: Plastic
- Package: SOT-323
Technical Specifications
| Parameter | Symbol | Model | Value | Unit |
|---|---|---|---|---|
| Collector Base Voltage | -VCBO | BC856W | 80 | V |
| BC857W, BC860W | 50 | V | ||
| BC858W, BC859W | 30 | V | ||
| Collector Emitter Voltage | -VCEO | BC856W | 65 | V |
| BC857W, BC860W | 45 | V | ||
| BC858W, BC859W | 30 | V | ||
| Emitter Base Voltage | -VEBO | All | 5 | V |
| Collector Current | -IC | All | 100 | mA |
| Peak Collector Current | -ICM | All | 200 | mA |
| Power Dissipation | Ptot | All | 150 | mW |
| Junction Temperature | Tj | All | 150 | C |
| Storage Temperature Range | Tstg | All | -65 to +150 | C |
| Collector Base Cutoff Current | -ICBO | All | - | 15 nA |
| (at -VCB = 30 V) | ||||
| Collector Base Breakdown Voltage | -V(BR)CBO | BC856W | 80 | V |
| BC857W, BC860W | 50 | V | ||
| BC858W, BC859W | 30 | V | ||
| Collector Emitter Breakdown Voltage | -V(BR)CES | BC856W | 80 | V |
| BC857W, BC860W | 50 | V | ||
| BC858W, BC859W | 30 | V | ||
| Collector Emitter Breakdown Voltage | -V(BR)CEO | BC856W | 65 | V |
| BC857W, BC860W | 45 | V | ||
| BC858W, BC859W | 30 | V | ||
| Emitter Base Breakdown Voltage | -V(BR)EBO | All | 5 | V |
| Collector Emitter Saturation Voltage | -VCE(sat) | at -IC = 10 mA, -IB = 0.5 mA | - | 0.3 V |
| at -IC = 100 mA, -IB = 5 mA | - | 0.65 V | ||
| Base Emitter On Voltage | -VBE(on) | at -IC = 2 mA, -VCE = 5 V | - | 0.75 V |
| at -IC = 10 mA, -VCE = 5 V | - | 0.82 V | ||
| Current Gain Bandwidth Product | fT | at -VCE = 5 V, -IC = 10 mA, f = 100 MHz | 100 | MHz |
| Output Capacitance | Cob | at -VCB = 10 V, f = 1 MHz | - | 6 pF |
| DC Current Gain | hFE | Group A | 110 - 200 | - |
| Group B | 200 - 450 | - | ||
| Group C | 420 - 800 | - |
| Marking Code | Type |
|---|---|
| 3A | 856AW |
| 3B | 856BW |
| 3C | 856CW |
| 3E | 857AW |
| 3F | 857BW |
| 3G | 857CW |
| 3J | 858AW |
| 3K | 858BW |
| 3L | 858CW |
| 2 | 859AW |
| 4A | 859BW |
| 4B | 859CW |
| 4C | 860AW |
| 4E | 860BW |
| 4F | 860CW |
| 4G | 860CW |
2510130924_CBI-BC860CW_C51315155.pdf
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