High speed switching silicon epitaxial planar Schottky barrier diode CBI RB521S-30 with compact SOD 523 package
Key Attributes
Model Number:
RB521S-30
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
1A
Reverse Leakage Current (Ir):
30uA@10V
Voltage - DC Reverse (Vr) (Max):
30V
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
500mV@200mA
Current - Rectified:
200mA
Mfr. Part #:
RB521S-30
Package:
SOD-523
Product Description
Product Overview
The RB521S-30 is a silicon epitaxial planar Schottky barrier diode designed for low current rectification and high-speed switching applications. Its extremely small surface mounting type makes it suitable for compact electronic designs.
Product Attributes
- Type: Silicon Epitaxial Planar Schottky Barrier Diode
- Marking Code: "C"
- Package Type: SOD-523
Technical Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Reverse Voltage | VR | 30 | V |
| Mean Rectifying Current | IO | 200 | mA |
| Peak Forward Surge Current (60Hz for Cyc.) | IFSM | 1 | A |
| Junction Temperature | Tj | 125 | C |
| Storage Temperature Range | Tstg | -40 to +125 | C |
| Forward Voltage at IF = 200 mA | VF | 0.5 | V |
| Reverse Current at VR = 10 V | IR | 30 | A |
Package Outline (SOD-523)
| Dimension | Unit | Min | Typ | Max |
|---|---|---|---|---|
| A | mm | 0.60 | 0.70 | |
| b | mm | 0.3 | 0.4 | |
| p | mm | 0.100 | 0.135 | |
| C | mm | 1.15 | 1.25 | |
| D | mm | 0.75 | 0.85 | |
| E | mm | 1.5 | 1.7 | |
| H | mm | 0.1 | ||
| O | mm |
2410121547_CBI-RB521S-30_C2828428.pdf
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