Electronic PNP Transistor CBI BC807-40W in SOT-323 Package Featuring Epitaxial Planar Die Technology
Key Attributes
Model Number:
BC807-40W
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
80MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Mfr. Part #:
BC807-40W
Package:
SOT-323
Product Description
Product Overview
The SOT-323 Plastic-Encapsulated Transistors are designed for automatic insertion, featuring an epitaxial planar die construction. They are complementary to the BC817W series. These PNP transistors are suitable for various electronic applications requiring reliable performance and compact packaging.
Product Attributes
- Package Type: SOT-323
- Transistor Type: PNP
- Construction: Epitaxial planar die
- Complementary To: BC817W
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Max | Unit |
|---|---|---|---|---|---|
| VCBO | Collector-base breakdown voltage | IC=-10A, IE=0 | -50 | V | |
| VCEO | Collector-emitter breakdown voltage | IC=-10mA, IB=0 | -45 | V | |
| VEBO | Emitter-base breakdown voltage | IE=-1A, IC=0 | -5 | V | |
| ICBO | Collector cut-off current | VCB=-20 V, IE=0 | -0.1 | A | |
| ICEO | Collector cut-off current | VCE=-20 V, IB=0 | -0.2 | A | |
| IEBO | Emitter cut-off current | VEB=-5 V, IC=0 | -0.1 | A | |
| hFE(1) | DC current gain | VCE=-1V, IC=-100mA | 100 | 600 | |
| hFE(2) | DC current gain | VCE=-1V, IC=-500mA | 40 | ||
| VCE(sat) | Collector-emitter saturation voltage | IC=-500mA, IB=-50 mA | -0.7 | V | |
| VBE(on) | Base-emitter voltage | VCE=-1V, IC=-500mA | -1.2 | V | |
| fT | Transition frequency | VCE=-5 V, IC=-10mA, f=100MHz | 80 | MHz | |
| Cob | Collector output capacitance | VCB=-10V, f=1MHz | 10 | pF |
Maximum Ratings (Ta=25 unless otherwise noted)
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| VCBO | Collector-Base Voltage | -50 | V |
| VCEO | Collector-Emitter Voltage | -45 | V |
| VEBO | Emitter-Base Voltage | -5 | V |
| IC | Collector Current | -500 | mA |
| PC | Collector Power Dissipation | 200 | mW |
| RJA | Thermal Resistance From Junction To Ambient | 417 | /W |
| Tj | Junction Temperature | 150 | |
| Tstg | Storage Temperature | -55+150 |
hFE Classification
| Rank | Range | Marking |
|---|---|---|
| BC807-16W | 100-250 | 5A |
| BC807-25W | 160-400 | 5B |
| BC807-40W | 250-600 | 5C |
Pinout
- BASE
- EMITTER
- COLLECTOR
2410121440_CBI-BC807-40W_C21714273.pdf
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