NPN transistor CBI MMBT5551 for medium power switching and amplification applications in SOT23 package

Key Attributes
Model Number: MMBT5551
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
300MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
160V
Operating Temperature:
-
Mfr. Part #:
MMBT5551
Package:
SOT-23
Product Description

Product Overview

The MMBT5551 is an NPN transistor designed for medium power amplification and switching applications. It serves as a complementary component to the MMBT5401 transistor.

Product Attributes

  • Marking: G1
  • Package: SOT-23 (Plastic surface mounted package; 3 leads)

Technical Specifications

Parameter Symbol Test conditions MIN TYP MAX Units
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Collector-Base Voltage VCBO 180 V
Collector-Emitter Voltage VCEO 160 V
Emitter-Base Voltage VEBO 6 V
Collector Current -Continuous IC 0.6 A
Collector Power Dissipation PC 300 mW
Junction Temperature Tj 150
Storage Temperature Tstg -55 150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Collector-base breakdown voltage V(BR)CBO IC=100A, IE=0 180 V
Collector-emitter breakdown voltage V(BR)CEO* IC=1mA, IB=0 160 V
Emitter-base breakdown voltage V(BR)EBO IE=10A, IC=0 6 V
Collector cut-off current ICBO VCB=120V, IE=0 50 nA
Emitter cut-off current IEBO VEB=4V, IC=0 50 nA
DC current gain hFE1* VCE=5V, IC=1mA 80
hFE2* VCE=5V, IC =10mA 100 300
hFE3* VCE=5V, IC=50mA 50
Collector-emitter saturation voltage VCEsat* IC=10mA, IB=1mA 0.15 V
IC=50mA, IB=5mA 0.2 V
Base-emitter saturation voltage VBEsat* IC=10mA, IB=1mA 1 V
IC=50mA, IB=5mA 1 V
Transition frequency fT VCE=10V, IC=10mA, f=100MHz 100 300 MHz
Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 6 pF
Input capacitance Cib VBE=0.5V, IC=0, f=1MHz 20 pF
Noise figure NF VCE=5V, Ic=0.25mA, f=10Hz to 15.7KHz, Rs=1k 8 dB

2410121248_CBI-MMBT5551_C2828452.pdf

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