Compact SOD323 package silicon epitaxial planar switching diode CBI 1N4148WS with fast switching speed

Key Attributes
Model Number: 1N4148WS
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
350mA
Reverse Leakage Current (Ir):
1uA@75V
Reverse Recovery Time (trr):
4ns
Operating Junction Temperature Range:
-
Voltage - DC Reverse (Vr) (Max):
75V
Diode Configuration:
Independent
Pd - Power Dissipation:
200mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
150mA
Mfr. Part #:
1N4148WS
Package:
SOD-323
Product Description

Product Overview

The 1N4148WS is a silicon epitaxial planar switching diode housed in a compact SOD-323 package. It offers fast switching speeds, making it suitable for various electronic applications. This diode is also available in other case styles, including DO-35 (1N4148), MiniMELF (LL4148), and MicroMELF (MCL4148).

Product Attributes

  • Package: SOD-323
  • Diode Type: Silicon Epitaxial Planar Switching Diode
  • Marking Code: "W2"

Technical Specifications

Parameter Symbol Value Unit Condition
Peak Reverse Voltage VRM 100 V
Reverse Voltage VR 75 V
Average Rectified Forward Current IF(AV) 150 mA
Surge Forward Current IFSM 350 mA t < 1 s, Tj = 25 OC
Power Dissipation Ptot 200 mW
Thermal Resistance from Junction to Ambient Air RJA 625 OC/W
Junction Temperature Tj 150 OC
Storage Temperature Range Tstg -65 to +150 OC
Forward Voltage VF 0.715 V at IF = 1 mA
Forward Voltage VF 0.855 V at IF = 10 mA
Forward Voltage VF 1 V at IF = 50 mA
Forward Voltage VF 1.25 V at IF = 150 mA
Peak Reverse Current IR 1 A at VR = 75 V
Peak Reverse Current IR 25 nA at VR = 20 V
Peak Reverse Current IR 50 A at VR = 75 V, TJ = 150 OC
Peak Reverse Current IR 30 A at VR = 25 V, TJ = 150 OC
Total Capacitance CT 2 pF at VR = 0 V, f = 1 MHz
Reverse Recovery Time trr 4 ns at Irr = 0.1 X IR, IF = IR = 10 mA, RL = 100

2410121246_CBI-1N4148WS_C2828422.pdf

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