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quality Plastic packaged CBI BC847B transistor ideal for switching and AF amplifier electronic applications factory
quality Plastic packaged CBI BC847B transistor ideal for switching and AF amplifier electronic applications factory

Plastic packaged CBI BC847B transistor ideal for switching and AF amplifier electronic applications

Key Attributes
Model Number: BC847B
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-
Mfr. Part #:
BC847B
Package:
SOT-23
Product Description

Product Overview

This NPN transistor is ideally suited for automatic insertion, making it a versatile component for switching and AF amplifier applications. Designed for reliability and efficiency, it offers robust performance characteristics.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Package Type: SOT-23
  • Material: Plastic surface mounted package

Technical Specifications

Parameter Symbol Test Conditions BC846 BC847 BC848 Units
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Collector-Base Voltage VCBO 80 50 30 V
Collector-Emitter Voltage VCEO 65 45 30 V
Emitter-Base Voltage VEBO 6 V
Collector Current Continuous IC 0.1 A
Collector Power Dissipation PC* 200 mW
Junction Temperature TJ 150
Storage Temperature Tstg -65-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Collector-base breakdown voltage VCBO IC= 10A, IE=0 80 50 30 V
Collector-emitter breakdown voltage VCEO IC= 10mA, IB=0 65 45 30 V
Emitter-base breakdown voltage VEBO IE= 10A, IC=0 6 V
Collector cut-off current ICBO VCB=70 V , IE=0 0.1 A
VCB=50 V , IE=0 0.1 A
VCB=30 V , IE=0 0.1 A
Collector cut-off current ICEO VCE=60 V , IB=0 0.1 A
VCE=45 V , IB=0 0.1 A
VCE=30 V , IB=0 0.1 A
Emitter cut-off current IEBO VEB=5 V , IC=0 0.1 A
DC current gain hFE VCE= 5V, IC= 2mA 110-200 220-450 420-800
Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 5mA 0.5 V
Base-emitter saturation voltage VBE(sat) IC=100mA, IB= 5mA 1.1 V
Transition frequency fT VCE= 5 V, IC= 10mA, f=100MHz 100 MHz
Collector output capacitance Cob VCB=10V, f=1MHz 4.5 pF

Device Marking & Pinout

  • BC846A = 1A
  • BC846B = 1B
  • BC847A = 1E
  • BC847B = 1F
  • BC847C = 1G
  • BC848A = 1J
  • BC848B = 1K
  • BC848C = 1L

SOT-23 Pinout:

  1. BASE
  2. EMITTER
  3. COLLECTOR

2410121628_CBI-BC847B_C2919762.pdf

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