High conductance switching diode CBI BAS16V for in general purpose electronic switching applications
Key Attributes
Model Number:
BAS16V
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
1uA@75V
Reverse Recovery Time (trr):
4ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
75V
Pd - Power Dissipation:
150mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
200mA
Mfr. Part #:
BAS16V
Package:
SOT-563
Product Description
Product Overview
A SOT-563 packaged switching diode designed for general-purpose switching applications. It offers fast switching speeds and high conductance. This diode is suitable for various electronic circuits requiring efficient switching.Product Attributes
- Marking: KAM
- Type: Plastic-Encapsulate Diodes
- Category: SWITCHING DIODE
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
Technical Specifications
| Parameter | Symbol | Limit | Unit | Conditions |
|---|---|---|---|---|
| Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25 | ||||
| Non-Repetitive Peak Reverse Voltage | VRM | 100 | V | |
| Peak Repetitive Peak Reverse Voltage | VRRM | 75 | V | |
| Working Peak Reverse Voltage | VRWM | 75 | V | |
| DC Blocking Voltage | VR | 75 | V | |
| RMS Reverse Voltage | VR(RMS) | 53 | V | |
| Forward Continuous Current | IFM | 300 | mA | |
| Average Rectified Output Current | IO | 200 | mA | |
| Non-Repetitive Peak Forward Surge Current | IFSM | 2.0 | A | @t=8.3ms |
| Power Dissipation | Pd | 150 | mW | |
| Thermal Resistance Junction to Ambient | RJA | 833 | /W | |
| Operation Junction and Storage Temperature Range | TJ,TSTG | -55~+150 | ||
| Electrical Ratings @Ta=25 | ||||
| Reverse breakdown voltage | V (BR) | 75 | V | IR=100 A |
| Forward voltage | VF1 | 0.715 | V | IF=1mA |
| VF2 | 0.855 | V | IF=10mA | |
| VF3 | 1.0 | V | IF=50mA | |
| VF4 | 1.25 | V | IF=150mA | |
| Reverse current | IR1 | 1 | A | VR=75V |
| IR2 | 25 | nA | VR=20V | |
| Capacitance between terminals | CT | 2 | pF | VR=0V,f=1MHz |
| Reverse recovery time | trr | 4 | ns | IF=IR=10mA Irr=0.1XIR,RL=100 |
2409302300_CBI-BAS16V_C5362144.pdf
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