Surface Mount NPN Transistor CBI S9014T with Collector Emitter Voltage 45V and Plastic Encapsulation

Key Attributes
Model Number: S9014T
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
150MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Mfr. Part #:
S9014T
Package:
SOT-523
Product Description

Product Overview

This NPN transistor is designed for surface mount applications and serves as a complementary part to the S9015T. It offers a compact form factor suitable for various electronic circuits. Key electrical characteristics include a collector-base breakdown voltage of 50V, a collector-emitter breakdown voltage of 45V, and a collector current rating of 100mA. The transistor is classified by its DC current gain (hFE) into 'L' (200450) and 'H' (4501000) ranks.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Package Type: SOT-523
  • Encapsulation: Plastic-Encapsulate Transistors
  • Marking: J6

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Voltage VCBO (Ta=25 unless otherwise noted) 50 V
Collector-Emitter Voltage VCEO (Ta=25 unless otherwise noted) 45 V
Emitter-Base Voltage VEBO (Ta=25 unless otherwise noted) 5 V
Collector Current IC (Ta=25 unless otherwise noted) 100 mA
Collector Power Dissipation PC (Ta=25 unless otherwise noted) 200 mW
Thermal Resistance Junction To Ambient RJA (Ta=25 unless otherwise noted) 625 /W
Junction Temperature Tj (Ta=25 unless otherwise noted) 150
Storage Temperature Tstg (Ta=25 unless otherwise noted) -55 +150
Collector-base breakdown voltage V(BR)CBO IC=100A, IE=0 50 V
Collector-emitter breakdown voltage V(BR)CEO IC=100A, IB=0 45 V
Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 5 V
Collector cut-off current ICBO VCB=50V, IE=0 100 nA
Collector cut-off current ICEO VCE=35V, IB=0 100 nA
Emitter cut-off current IEBO VEB=4V, IC=0 100 nA
DC current gain hFE VCE=5V, IC=1mA 200 1000
Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=5mA 0.3 V
Base-emitter saturation voltage VBE(sat) IC=100mA, IB=5mA 1 V
Base-emitter voltage VBE VCE=5V, IC=2mA 0.58 0.7 V
Transition frequency fT VCE=5V,IC=10mA , f=30MHz 150 MHz
Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 3.5 pF

hFE Rank Classification

RANK RANGE
L 200450
H 4501000

2403071552_CBI-S9014T_C21714178.pdf

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