SOT-89 Package NPN Silicon Epitaxial Planar Transistor CBI 2SC2881U for Power Amplification Circuits
Key Attributes
Model Number:
2SC2881U
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
5V
Transition Frequency(fT):
120MHz
Type:
NPN
Current - Collector(Ic):
800mA
Collector - Emitter Voltage VCEO:
120V
Mfr. Part #:
2SC2881U
Package:
SOT-89
Product Description
Product Overview
This is an NPN Silicon Epitaxial Planar Transistor designed for power amplification. It offers specific electrical characteristics and is housed in a SOT-89 package. The transistor is suitable for applications requiring precise current gain and voltage ratings.
Product Attributes
- Type: NPN Silicon Epitaxial Planar Transistor
- Package: SOT-89
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25 °C) | ||||
| Collector Base Voltage | VCBO | 120 | V | |
| Collector Emitter Voltage | VCEO | 120 | V | |
| Emitter Base Voltage | VEBO | 5 | V | |
| Collector Current | IC | 800 | mA | |
| Base Current | IB | 160 | mA | |
| Collector Power Dissipation | PC | 0.5 | W | 1) Mounted on ceramic board (250 mm² X 0.8 mm). |
| Junction Temperature | Tj | 150 | °C | |
| Storage Temperature Range | Tstg | -55 to +150 | °C | |
| Characteristics (at Ta = 25 °C) | ||||
| DC Current Gain at VCE = 5 V, IC =100 mA (Group O) | hFE | 80 - 160 | - | |
| DC Current Gain at VCE = 5 V, IC =100 mA (Group Y) | hFE | 120 - 240 | - | |
| Collector Base Cutoff Current at VCB = 120 V | ICBO | - | 100 | nA |
| Emitter Base Cutoff Current at VEB = 5 V | IEBO | - | 100 | nA |
| Collector Emitter Breakdown Voltage at IC = 1 mA | V(BR)CEO | 120 | V | |
| Emitter Base Breakdown Voltage at IE = 1 mA | V(BR)EBO | 5 | V | |
| Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA | VCE(sat) | - | 1 | V |
| Base Emitter on Voltage at VCE = 5 V, IC = 500 mA | VBE(on) | - | 1 | V |
| Transition Frequency at VCE = 5 V, IC = 100 mA | fT | - | 120 | MHz |
| Collector Output Capacitance at VCB = 10 V, f = 1 MHz | Cob | - | 30 | pF |
2410121503_CBI-2SC2881U_C5362137.pdf
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