Electronic switching transistor CBI BC857AW NPN silicon epitaxial planar for general purpose circuits
Key Attributes
Model Number:
BC857AW
Product Custom Attributes
Mfr. Part #:
BC857AW
Package:
SOT-323
Product Description
Product Overview
This NPN Silicon Epitaxial Planar Transistor is designed for general purpose and switching applications. It offers various models with distinct voltage and current ratings, suitable for a wide range of electronic circuits. The transistors are manufactured by Heyuan China Base Electronics Technology Co., Ltd.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Type: NPN Silicon Epitaxial Planar Transistor
Technical Specifications
| Parameter | Symbol | BC846W | BC847W | BC848W | BC849W | BC850W | Unit |
|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25 C) | |||||||
| Collector Base Voltage | VCBO | 80 | 50 | 30 | 30 | 50 | V |
| Collector Emitter Voltage | VCEO | 65 | 45 | 30 | 30 | 45 | V |
| Emitter Base Voltage | VEBO | 6 | 6 | 5 | 5 | 5 | V |
| Collector Current | IC | 100 | mA | ||||
| Peak Collector Current | ICM | 200 | mA | ||||
| Total Power Dissipation | Ptot | 200 | mW | ||||
| Junction Temperature | Tj | 150 | C | ||||
| Storage Temperature Range | Tstg | -55 to +150 | C | ||||
| Characteristics at Ta = 25 C | |||||||
| DC Current Gain | hFE | 110 - 220 | 200 - 450 | 420 - 800 | - | - | - |
| (at VCE = 5 V, IC = 2 mA) | BC846AW~BC850AW | BC846BW~BC850BW | BC846CW~BC850CW | ||||
| Collector Base Voltage | VCBO | 80 | 50 | 30 | 30 | 50 | V |
| (at IC = 10 A) | |||||||
| Collector Emitter Voltage | VCEO | 65 | 45 | 30 | 30 | 45 | V |
| (at IC = 10 mA) | |||||||
| Emitter Base Voltage | VEBO | 6 | 6 | 5 | 5 | 5 | V |
| (at IE = 1 A) | |||||||
| Collector Base Cutoff Current | ICBO | -15 | nA | ||||
| (at VCB = 30 V) | |||||||
| Emitter Base Cutoff Current | IEBO | -100 | nA | ||||
| (at VEB = 5 V) | |||||||
| Collector Emitter Saturation Voltage | VCE(sat) | -0.25 | V | ||||
| (at IC = 10 mA, IB = 0.5 mA) | |||||||
| -0.6 | V | ||||||
| (at IC = 100 mA, IB = 5 mA) | |||||||
| Base Emitter Voltage | VBE | -0.7 | V | ||||
| (at VCE = 5 V, IC = 2 mA) | |||||||
| -0.77 | V | ||||||
| (at VCE = 5 V, IC = 10 mA) | |||||||
| Transition Frequency | fT | 100 | MHz | ||||
| (at VCE = 5 V, IC = 10 mA, f = 100 MHz) | |||||||
| Collector Output Capacitance | Cob | -4.5 | pF | ||||
| (at VCB = 10 V, IE = 0, f = 1 MHz) | |||||||
2509181531_CBI-BC857AW_C51814069.pdf
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