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quality General Purpose NPN Silicon Transistor CBI BC847CW for Electronic Switching and Circuit Applications factory
quality General Purpose NPN Silicon Transistor CBI BC847CW for Electronic Switching and Circuit Applications factory

General Purpose NPN Silicon Transistor CBI BC847CW for Electronic Switching and Circuit Applications

Key Attributes
Model Number: BC847CW
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
100MHz
Type:
PNP
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Mfr. Part #:
BC847CW
Package:
SOT-323
Product Description

Product Overview

This NPN Silicon Epitaxial Planar Transistor is designed for general purpose and switching applications. It offers a range of models with varying voltage and current ratings, making it suitable for diverse electronic circuits.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Type: NPN Silicon Epitaxial Planar Transistor

Technical Specifications

Parameter Symbol BC846W BC847W BC848W BC849W BC850W Unit
Absolute Maximum Ratings (Ta = 25 °C)
Collector Base Voltage VCBO 80 50 30 30 50 V
Collector Emitter Voltage VCEO 65 45 30 30 45 V
Emitter Base Voltage VEBO 6 6 5 5 5 V
Collector Current IC 100 mA
Peak Collector Current ICM 200 mA
Total Power Dissipation Ptot 200 mW
Junction Temperature Tj 150 °C
Storage Temperature Range Tstg - 55 to + 150 °C
Characteristics at Ta = 25 °C
DC Current Gain at VCE = 5 V, IC = 2 mA hFE 110 - 220 200 - 450 420 - 800 - - -
hFE - - - - - -
hFE - - - - - -
Collector Base Voltage at IC = 10 µA VCBO 80 50 30 30 50 V
Collector Emitter Voltage at IC = 10 mA VCEO 65 45 30 30 45 V
Emitter Base Voltage at IE = 1 µA VEBO 6 6 5 5 5 V
Collector Base Cutoff Current at VCB = 30 V ICBO - 15 nA
Emitter Base Cutoff Current at VEB = 5 V IEBO - 100 nA
Collector Emitter Saturation Voltage at IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA		 VCE(sat) 0.25 V
VCE(sat) 0.6 V
Base Emitter Voltage at VCE = 5 V, IC = 2 mA
VCE = 5 V, IC = 10 mA		 VBE 0.58 - 0.7 V
VBE 0.7 - 0.77 V
Transition Frequency at VCE = 5 V, IC = 10 mA, f = 100 MHz fT 100 MHz
Collector Output Capacitance at VCB = 10 V, IE = 0, f = 1 MHz Cob - 4.5 pF
Symbol Dimension in Millimeters Min Max
A 0.90 1.00
A1 0.010 0.100
B 1.20 1.40
bp 0.25 0.45
C 0.09 0.15
D 2.00 2.20
E 1.15 1.35
HE 2.15 2.55
Lp 0.25 0.46
θ 0° 6°

2411041754_CBI-BC847CW_C21714266.pdf

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