Plastic Encapsulated Diode CBI MMBD4448HAQW Ultra Small Surface Mount Switching Component
Key Attributes
Model Number:
MMBD4448HAQW
Product Custom Attributes
Reverse Leakage Current (Ir):
100nA@70V
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Recovery Time (trr):
4ns
Voltage - DC Reverse (Vr) (Max):
80V
Pd - Power Dissipation:
200mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
250mA
Mfr. Part #:
MMBD4448HAQW
Package:
SOT-363
Product Description
Product Overview
The MMBD4448H series of plastic-encapsulated diodes are designed for general-purpose switching applications. They feature ultra-small surface mount packaging and fast switching speeds, offering high conductance. These diodes are suitable for various electronic circuits requiring reliable and efficient switching.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Packaging: SOT-363
- Color: Green molding compound device (if applicable)
Technical Specifications
| Parameter | Symbol | Limit | Unit | Conditions |
|---|---|---|---|---|
| Non-Repetitive Peak Reverse Voltage | VRM | 100 | V | @Ta=25 |
| Peak Repetitive Peak Reverse Voltage | VRRM | 80 | V | @Ta=25 |
| Working Peak Reverse Voltage | VRWM | 80 | V | @Ta=25 |
| DC Blocking Voltage | VR | 80 | V | @Ta=25 |
| RMS Reverse Voltage | VR(RMS) | 57 | V | @Ta=25 |
| Forward Continuous Current | IFM | 500 | mA | @Ta=25 |
| Average Rectified Output Current | IO | 250 | mA | @Ta=25 |
| Forward Surge Current | IFSM | 2.0 | A | @t=8.3ms |
| Power Dissipation | Pd | 200 | mW | @Ta=25 |
| Thermal Resistance from Junction to Ambient | RJA | 625 | /W | @Ta=25 |
| Storage Temperature | TSTG | -55 ~+150 | @Ta=25 | |
| Reverse Breakdown Voltage | V (BR) | 80 | V | IR=100A |
| Forward Voltage | VF1 | 0.62 - 0.72 | V | IF=5mA |
| Forward Voltage | VF2 | 0.855 | V | IF=10mA |
| Forward Voltage | VF3 | 1.0 | V | IF=100mA |
| Forward Voltage | VF4 | 1.25 | V | IF=150mA |
| Reverse Current | IR1 | 100 | nA | VR=70V |
| Reverse Current | IR2 | 25 | nA | VR=20V |
| Capacitance Between Terminals | CT | 3.5 | pF | VR=0V,f=1MHz |
| Reverse Recovery Time | trr | 4 | ns | IF=IR=10mA, Irr=0.1XIR,RL=100 |
| Model | MARKING | Pin 1 | Pin 2 | Pin 3 | Pin 4 |
|---|---|---|---|---|---|
| MMBD4448HADW | KA5 | - | + | - | - |
| MMBD4448HCDW | KA6 | - | - | + | - |
| MMBD4448HSDW | KA7 | + | + | - | + |
| MMBD4448HTW | KAA | - | + | - | - |
| MMBD4448HAQW | KAB | + | - | + | - |
2509181520_CBI-MMBD4448HAQW_C51814062.pdf
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