High Current NPN Silicon Power Transistor CBI 2SD882PU Designed for Amplification and Switching Uses
Product Overview
The 2SD882U is an NPN Silicon Power Transistor designed for various electronic applications. It is categorized into four groups (R, Q, P, E) based on its DC current gain (hFE). This transistor offers robust performance with high current handling capabilities and defined saturation voltages, making it suitable for power switching and amplification circuits.
Product Attributes
- Type: NPN Silicon Power Transistor
- Current Gain Groups: R, Q, P, E
- Package Outline: SOT-89
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions | |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Collector to Base Voltage | VCBO | 40 | V | ||
| Collector to Emitter Voltage | VCEO | 30 | V | ||
| Emitter to Base Voltage | VEBO | 5 | V | ||
| Collector Current | IC | 3 | A | ||
| Peak Collector Current (t = 10 ms) | ICP | 7 | A | ||
| Total power dissipation (Ta = 25 OC) | Ptot | 1 | W | (Ta = 25 OC) | |
| Total power dissipation (Tc = 25 OC) | Ptot | 10 | W | (Tc = 25 OC) | |
| Junction Temperature | Tj | 150 | OC | ||
| Storage Temperature Range | Tstg | -55 to +150 | OC | ||
| Characteristics at Ta = 25 OC | |||||
| DC Current Gain (Group R) | hFE | 30 | - | VCE = 2 V, IC = 20 mA | |
| DC Current Gain (Group Q) | hFE | 60 | - | VCE = 2 V, IC = 20 mA | |
| DC Current Gain (Group P) | hFE | 100 | - | VCE = 2 V, IC = 20 mA | |
| DC Current Gain (Group E) | hFE | 160 | - | VCE = 2 V, IC = 20 mA | |
| DC Current Gain (Group R) | hFE | - | 120 | VCE = 2 V, IC = 1 A | |
| DC Current Gain (Group Q) | hFE | - | 200 | VCE = 2 V, IC = 1 A | |
| DC Current Gain (Group P) | hFE | - | 320 | VCE = 2 V, IC = 1 A | |
| DC Current Gain (Group E) | hFE | - | 400 | VCE = 2 V, IC = 1 A | |
| Collector Base Cutoff Current | ICBO | - | 1 | A | VCB = 30 V |
| Emitter Base Cutoff Current | IEBO | - | 1 | A | VEB = 3 V |
| Collector Emitter Saturation Voltage | VCE(sat) | - | 0.5 | V | IC = 2 A, IB = 0.2 A |
| Base Emitter Saturation Voltage | VBE(sat) | - | 2 | V | IC = 2 A, IB = 0.2 A |
| Gain Bandwidth Product | fT | - | 90 | MHz | VCE = 5 V, IC = 0.1 A |
| Output Capacitance | Cob | - | 45 | pF | VCB = 10 V, f = 1 MHz |
2410121434_CBI-2SD882PU_C2828478.pdf
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