Electronic NPN Transistor CBI 2SD1623SU with Low Saturation Voltage and High Collector Current Rating
Key Attributes
Model Number:
2SD1623SU
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
6V
Pd - Power Dissipation:
1.3W
Transition Frequency(fT):
150MHz
Type:
NPN
Current - Collector(Ic):
2A
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
2SD1623SU
Package:
SOT-89
Product Description
Product Overview
The 2SD1623 is a high-performance NPN transistor designed for various electronic applications. It features a low collector-to-emitter saturation voltage, large current capacity with a wide Area of Safe Operation (ASO), and fast switching speeds. This transistor is complementary to the 2SB1123 PNP transistors, making it suitable for a wide range of circuit designs.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Type: NPN Transistor
- Package: SOT-89
Technical Specifications
Absolute Maximum Ratings (Ta = 25)
| Parameter | Symbol | Rating | Unit |
|---|---|---|---|
| Collector - Base Voltage | VCBO | 60 | V |
| Collector - Emitter Voltage | VCEO | 50 | V |
| Emitter - Base Voltage | VEBO | 6 | V |
| Collector Current - Continuous | IC | 2 | A |
| Collector Current - Pulse | ICP | 4 | A |
| Collector Power Dissipation (Note.1) | PC | 0.5 (Note.1) 1.3 | W |
| Junction Temperature | TJ | 150 | |
| Storage Temperature Range | Tstg | -55 to 150 |
Note.1: Mounted on ceramic board (250mm 0.8mm)
Electrical Characteristics (Ta = 5)
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | VCBO | Ic= 100 uAIE= 0 | 60 | V | ||
| Collector-emitter breakdown voltage | VCEO | Ic= 1 mARBE= | 50 | V | ||
| Emitter -base breakdown voltage | VEBO | IE= 100 uAIC= 0 | 6 | V | ||
| Collector-base cut-off current | ICBO | VCB= 50 V , IE= 0 | 0.1 | uA | ||
| Emitter cut-off current | IEBO | VEB= 4V , IC=0 | 0.1 | uA | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=1 A, IB=50 mA | 0.15 | 0.4 | V | |
| Base - emitter saturation voltage | VBE(sat) | IC=1 A, IB=50 mA | 0.9 | 1.2 | V | |
| DC current gain | hFE | VCE= 2V, IC= 100 mA | 100 | 560 | ||
| VCE= 2V, IC= 1.5 A | 40 | |||||
| Turn-ON Time | ton | 60 | ns | |||
| Storage Time | tstg | 550 | ns | |||
| Fall Time | tf | 30 | ns | |||
| Collector output capacitance | Cob | VCB= 10V, IE= 0,f=1MHz | 12 | pF | ||
| Transition frequency | fT | VCE= 10V, IC= 50mA | 150 | MHz |
Classification of hfe(1)
| Type | Range | Marking |
|---|---|---|
| 2SD1623-R | 100-200 | DF R |
| 2SD1623-S | 140-280 | DF S |
| 2SD1623-T | 200-400 | DF T |
| 2SD1623-U | 280-560 | DF U |
2411220305_CBI-2SD1623SU_C5362143.pdf
Related Products
power control Sensata B612F-2T-YEC module for AC DC variable voltage output applications up to 15KW
Sensata B-2T, B-2 Series Power Modules The Sensata B-2T and B-2 Series Power Modules offer versatile solutions for AC or DC variable voltage output applications, capable of handling up to 15KW. These modules feature eight circuit options and are UL Recognized (E72445), providing reliable performance ...
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
