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quality High Voltage NPN Transistor CBI FMMT493 Featuring Compact SOT23 Plastic Encapsulation for Electronics factory
quality High Voltage NPN Transistor CBI FMMT493 Featuring Compact SOT23 Plastic Encapsulation for Electronics factory

High Voltage NPN Transistor CBI FMMT493 Featuring Compact SOT23 Plastic Encapsulation for Electronics

Key Attributes
Model Number: FMMT493
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
250mW
Transition Frequency(fT):
150MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
100V
Mfr. Part #:
FMMT493
Package:
SOT-23
Product Description

Product Overview

The FMMT493 is an NPN transistor designed for various electronic applications. It offers complementary pairing with the FMMT593. Key features include a high collector-emitter voltage rating and a compact SOT-23 plastic-encapsulate package, making it suitable for surface mounting.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Type: Transistor (NPN)
  • Complementary Type: FMMT593
  • Marking: 493
  • Package: SOT-23 Plastic-Encapsulate Transistors

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
Collector-Base Voltage VCBO 120 V
Collector-Emitter Voltage VCEO 100 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 1000 mA
Collector Power Dissipation PC 250 mW
Thermal Resistance From Junction To Ambient RJA 500 /W
Junction Temperature Tj 150
Storage Temperature Tstg -55 +150
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
Collector-base breakdown voltage V(BR)CBO IC=100A, IE=0 120 V
Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 100 V
Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 5 V
Collector cut-off current ICBO VCB=100V, IE=0 0.1 A
Collector cut-off current ICES VCES=100V, IE=0 0.1 A
Emitter cut-off current IEBO VEB=4V, IC=0 0.1 A
DC current gain hFE(1) * VCE=10V, IC=1mA 100
DC current gain hFE(2) * VCE=10V, IC=250mA 100 300
DC current gain hFE(3) * VCE=10V, IC=0.5A 60
DC current gain hFE(4) * VCE=10V, IC=1A 20
Collector-emitter saturation voltage VCE(sat)1* IC=500mA, IB=50mA 0.3 V
Collector-emitter saturation voltage VCE(sat)2* IC=1A, IB=100mA 0.6 V
Base-emitter saturation voltage VBE(sat)* IC=1A, IB=100mA 1.15 V
Base-emitter voltage VBE* VCE=10V, IC=1A 1 V
Transition frequency fT VCE=10V,IC=50mA, f=100MHz 150 MHz
Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 10 pF
*Pulse test: pulse width 300s, duty cycle2.0%.
Symbol Dimension in Millimeters Min Max
A 0.90 1.10
A1 0.013 0.100
B 1.80 2.00
bp 0.35 0.50
C 0.09 0.150
D 2.80 3.00
E 1.20 1.40
HE 2.20 2.80
Lp 0.20 0.50
0 5

Package Outline: SOT-23 Plastic surface mounted package; 3 leads.

Pinout: 1. BASE, 2. EMITTER, 3. COLLECTOR


2410121839_CBI-FMMT493_C21714253.pdf

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