Schottky Barrier Diode Array with Fast Switching CBI BAS40DW-04 Plastic Encapsulated SOT 363 Package
Key Attributes
Model Number:
BAS40DW-04
Product Custom Attributes
Reverse Leakage Current (Ir):
200nA@30V
Operating Junction Temperature Range:
-65℃~+125℃
Voltage - DC Reverse (Vr) (Max):
40V
Voltage - Forward(Vf@If):
1V@40mA
Current - Rectified:
200mA
Mfr. Part #:
BAS40DW-04
Package:
SOT-363
Product Description
Product Overview
This product is a plastic-encapsulated Schottky barrier diode array designed for applications requiring low forward voltage drop and fast switching speeds. It is suitable for general-purpose rectification and switching circuits.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Type: Plastic-Encapsulate Transistors SCHOTTKY BARRIER DIODE ARRAYS
- Package: SOT-363
Technical Specifications
| Parameter | Symbol | Test conditions | MIN | MAX | Unit | |
|---|---|---|---|---|---|---|
| Non-Repetitive Peak reverse voltage | VRM | 40 | V | |||
| DC Blocking Voltage | VR | 40 | V | |||
| Average Rectified Output Current | IO | 200 | mA | |||
| Power Dissipation | Pd | 200 | mW | |||
| Thermal Resistance. Junction to Ambient Air | RJA | 625 | /W | |||
| Junction temperature | TJ | 125 | ||||
| Storage temperature range | TSTG | -65 | 125 | |||
| Reverse breakdown voltage | V(BR) | IR= 10A | 40 | V | ||
| Reverse voltage leakage current | IR | VR=30V | 200 | nA | ||
| Forward voltage | VF | IF=1mA | 380 | mV | ||
| VF | IF=40mA | 1000 | mV | |||
| Total capacitance | CT | VR=0,f=1MHz | 5 | pF | ||
| Reverse recovery time | trr | IF=10mA, IR=IF=1mA RL=100 | 5 | nS | ||
Package Outline Dimensions (SOT-363)
| Symbol | Dimension in Millimeters | Min | Max |
|---|---|---|---|
| A | 0.90 | 1.00 | |
| A1 | 0.010 | 0.100 | |
| B | 1.20 | 1.40 | |
| bp | 0.25 | 0.45 | |
| C | 0.09 | 0.15 | |
| D | 2.00 | 2.20 | |
| E | 1.15 | 1.35 | |
| HE | 2.15 | 2.55 | |
| Lp | 0.25 | 0.46 | |
| 0 | 6 |
2410121628_CBI-BAS40DW-04_C21714277.pdf
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