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quality NPN Silicon Epitaxial Planar Transistor CBI MMBT3904W Suitable for Switching Amplifier Applications factory
quality NPN Silicon Epitaxial Planar Transistor CBI MMBT3904W Suitable for Switching Amplifier Applications factory

NPN Silicon Epitaxial Planar Transistor CBI MMBT3904W Suitable for Switching Amplifier Applications

Key Attributes
Model Number: MMBT3904W
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-
Mfr. Part #:
MMBT3904W
Package:
SOT-323
Product Description

Product Overview

This NPN Silicon Epitaxial Planar Transistor is designed for switching and amplifier applications. It offers a range of DC current gain values across different collector currents and exhibits breakdown voltages suitable for general-purpose use. The device is available in a SOT-323 package, making it suitable for compact electronic designs.

Product Attributes

  • Type: NPN Silicon Epitaxial Planar Transistor
  • Marking Code: 1E
  • Origin: Heyuan China Base Electronics Technology Co., Ltd.
  • Package: SOT-323

Technical Specifications

Parameter Symbol Value Unit Conditions
Absolute Maximum Ratings
Collector Base Voltage VCBO 60 V Ta = 25 C
Collector Emitter Voltage VCEO 40 V Ta = 25 C
Emitter Base Voltage VEBO 6 V Ta = 25 C
Collector Current IC 200 mA Ta = 25 C
Total Power Dissipation Ptot 200 mW Ta = 25 C
Junction Temperature Tj 150 C
Storage Temperature Range Tstg -55 to +150 C
Characteristics
DC Current Gain hFE 40 - VCE = 1 V, IC = 0.1 mA
DC Current Gain hFE 70 - VCE = 1 V, IC = 1 mA
DC Current Gain hFE 100 - VCE = 1 V, IC = 10 mA
DC Current Gain hFE 60 - VCE = 1 V, IC = 50 mA
DC Current Gain hFE 30 - VCE = 1 V, IC = 100 mA
Collector Emitter Cutoff Current ICES -50 nA VCE = 30 V
Emitter Base Cutoff Current IEBO -50 nA VEB = 3 V
Collector Base Breakdown Voltage V(BR)CBO 60 V IC = 10 A
Collector Emitter Breakdown Voltage V(BR)CEO 40 V IC = 1 mA
Emitter Base Breakdown Voltage V(BR)EBO 6 V IE = 10 A
Collector Emitter Saturation Voltage VCE(sat) 0.2 V IC = 10 mA, IB = 1 mA
Collector Emitter Saturation Voltage VCE(sat) 0.3 V IC = 50 mA, IB = 5 mA
Base Emitter Saturation Voltage VBE(sat) 0.65 V IC = 10 mA, IB = 1 mA
Base Emitter Saturation Voltage VBE(sat) 0.85 V IC = 50 mA, IB = 5 mA
Transition Frequency fT 300 MHz VCE = 20 V, -IE = 10 mA, f = 100 MHz
Collector Output Capacitance Cob -4 pF VCB = 10 V, f = 100 KHz
Delay Time td -35 ns VCC = 3 V, VBE(OFF) = 0.5 V, IC = 10 mA, IB1 = 1 mA
Rise Time tr -35 ns VCC = 3 V, VBE(OFF) = 0.5 V, IC = 10 mA, IB1 = 1 mA
Storage Time tstg -200 ns VCC = 3 V, IC = 10 mA, IB1 = -IB2 = 1 mA
Fall Time tf -50 ns VCC = 3 V, IC = 10 mA, IB1 = -IB2 = 1 mA
SOT-323 Package Outline Dimensions (Millimeters)
Symbol Dimension Min Max
A 0.90 1.00
A1 0.010 0.100
B 1.20 1.40
bp 0.25 0.45
C 0.09 0.15
D 2.00 2.20
E 1.15 1.35
HE 2.15 2.55
Lp 0.25 0.46
0 6

2411120950_CBI-MMBT3904W_C2828431.pdf

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