Medium Power NPN Transistor CBI 2SD1664U with 2 Amp Pulse Collector Current and SOT89 Package Type Design
Key Attributes
Model Number:
2SD1664U
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
500nA
Pd - Power Dissipation:
2W
Transition Frequency(fT):
150MHz
Type:
NPN
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
32V
Mfr. Part #:
2SD1664U
Package:
SOT-89
Product Description
NPN Silicon Epitaxial Medium Power Transistor
This NPN silicon epitaxial medium power transistor is designed for general-purpose applications. It offers reliable performance with defined current gain groups and breakdown voltage ratings.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Origin: China
- Package Type: SOT-89
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25 ℃) | ||||
| Collector Base Voltage | VCBO | 40 | V | |
| Collector Emitter Voltage | VCEO | 32 | V | |
| Emitter Base Voltage | VEBO | 5 | V | |
| Collector Current - DC | IC | 1 | A | |
| Collector Current - Pulse | ICP | 2 | A | 1) Single pulse, PW = 100 ms. |
| Total Power Dissipation | Ptot | 0.5 | W | 2) When mounted on a 40 X 40 X 0.7 mm ceramic board. |
| Junction Temperature | TJ | 150 | ℃ | |
| Storage Temperature Range | TStg | -55 to +150 | ℃ | |
| Characteristics (at Ta = 25 ℃) | ||||
| DC Current Gain at VCE = 3 V, IC = 100 mA (Group P) | hFE | 82 - 180 | - | |
| DC Current Gain at VCE = 3 V, IC = 100 mA (Group Q) | hFE | 120 - 270 | - | |
| DC Current Gain at VCE = 3 V, IC = 100 mA (Group R) | hFE | 180 - 390 | - | |
| Collector Base Breakdown Voltage at IC = 50 µA | V(BR)CBO | 40 | V | |
| Collector Emitter Breakdown Voltage at IC = 1 mA | V(BR)CEO | 32 | V | |
| Emitter Base Breakdown Voltage at IE = 50 µA | V(BR)EBO | 5 | V | |
| Collector Cutoff Current at VCB = 20 V | ICBO | - | 0.5 | µA |
| Emitter Cutoff Current at VEB = 4 V | IEBO | - | 0.5 | µA |
| Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA | VCE(sat) | - | 0.4 | V |
| Transition Frequency at -IE = 50 mA, VCE = 5 V, f = 100 MHz | fT | - | 150 | MHz |
| Output Capacitance at VCB = 10 V, f = 1 MHz | Cob | - | 15 | pF |
2410010201_CBI-2SD1664U_C5362133.pdf
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