Versatile plastic surface mounted NPN transistor CBI BC847A suitable for automatic insertion tasks

Key Attributes
Model Number: BC847A
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
65V
Operating Temperature:
-
Mfr. Part #:
BC847A
Package:
SOT-23
Product Description

Product Overview

This NPN transistor is ideally suited for automatic insertion, making it a versatile component for switching and AF amplifier applications. It offers reliable performance across various electrical characteristics, including breakdown voltages, current gains, and saturation voltages, within the SOT-23 package.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Package Type: SOT-23
  • Material: Plastic surface mounted package
  • Pin Configuration: 1. BASE, 2. EMITTER, 3. COLLECTOR

Technical Specifications

Parameter Symbol Test Conditions BC846 BC847 BC848 Units
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Collector-Base Voltage VCBO 80 50 30 V
Collector-Emitter Voltage VCEO 65 45 30 V
Emitter-Base Voltage VEBO 6 V
Collector Current Continuous IC 0.1 A
Collector Power Dissipation PC* 200 mW
Junction Temperature TJ 150
Storage Temperature Tstg -65-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Collector-base breakdown voltage VCBO IC= 10A, IE=0 80 50 30 V
Collector-emitter breakdown voltage VCEO IC= 10mA, IB=0 65 45 30 V
Emitter-base breakdown voltage VEBO IE= 10A, IC=0 6 V
Collector cut-off current ICBO VCB=70 V , IE=0 0.1 A
VCB=50 V , IE=0 0.1
VCB=30 V , IE=0 0.1
Collector cut-off current ICEO VCE=60 V , IB=0 0.1 A
VCE=45 V , IB=0 0.1
VCE=30 V , IB=0 0.1
Emitter cut-off current IEBO VEB=5 V , IC=0 0.1 A
DC current gain hFE VCE= 5V, IC= 2mA 110-200 (BC846A,847A,848A)
220-450 (BC846B,847B,848B)
420-800 (BC847C,BC848C)
Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 5mA 0.5 V
Base-emitter saturation voltage VBE(sat) IC=100mA, IB= 5mA 1.1 V
Transition frequency fT VCE= 5 V, IC= 10mA, f=100MHz 100 MHz
Collector output capacitance Cob VCB=10V, f=1MHz 4.5 pF

2410121628_CBI-BC847A_C2919759.pdf

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