General purpose PNP bipolar transistor CBI MMBTA56 suitable for amplifier applications in SOT23 package
Key Attributes
Model Number:
MMBTA56
Product Custom Attributes
Emitter-Base Voltage(Vebo):
4V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
50MHz
Type:
PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
80V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMBTA56
Package:
SOT-23
Product Description
Product Overview
This is a general-purpose PNP bipolar transistor designed for amplifier applications. It is available in a SOT-23 plastic package. On special request, different pin configurations can be manufactured.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Package Type: SOT-23 Plastic Package
- Pin Configuration: 1. Base, 2. Emitter, 3. Collector
Technical Specifications
Absolute Maximum Ratings (Ta = 25 C)
| Symbol | Value | Unit | Description |
|---|---|---|---|
| -VCBO | 80 | V | Collector Base Voltage |
| -VCEO | 80 | V | Collector Emitter Voltage |
| -VEBO | 4 | V | Emitter Base Voltage |
| -IC | 500 | mA | Collector Current |
| Ptot | 200 | mW | Total Device Dissipation |
| 2.8 | mW/C | Derate above 25C | |
| RJA | 357 | C/W | Thermal Resistance, Junction to Ambient |
| Tj | -55 to +150 | C | Junction Temperature |
| TS | -55 to +150 | C | Storage Temperature Range |
Characteristics (at Tamb = 25 C)
| Symbol | Min. | Max. | Unit | Description |
|---|---|---|---|---|
| hFE | 100 | - | DC Current Gain at -IC=10mA, -VCE=1V | |
| hFE | 100 | - | DC Current Gain at -IC=100mA, -VCE=1V | |
| -ICBO | - | 0.1 | A | Collector Cutoff Current at -VCB=80V |
| -ICEO | - | 0.1 | A | Collector Cutoff Current at -VCE=60V |
| -V(BR)CEO | 80 | - | V | Collector Emitter Breakdown Voltage at -IC=1mA |
| -V(BR)CBO | 80 | - | V | Collector Base Breakdown Voltage at -IC=100A |
| -V(BR)EBO | 4 | - | V | Emitter Base Breakdown Voltage at -IE=100A |
| -VCE(sat) | - | 0.25 | V | Collector Emitter Saturation Voltage at -IC=100mA, -IB=10mA |
| -VBE(on) | - | 1.2 | V | Base Emitter On Voltage at -IC=100mA, -VCE=1V |
| fT | 50 | - | MHz | Current Gain Bandwidth Product at -IC=100mA, -VCE=1V, f=100MHz |
Package Outline
Plastic surface mounted package; 3 leads SOT-23
2410121538_CBI-MMBTA56_C5362092.pdf
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