High voltage switching diode CBI BAV21W silicon epitaxial planar diode with 2 leads SOD123 package
Key Attributes
Model Number:
BAV21W
Product Custom Attributes
Reverse Leakage Current (Ir):
100nA@200V
Reverse Recovery Time (trr):
50ns
Operating Junction Temperature Range:
-65℃~+150℃@(Tj)
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
250V
Pd - Power Dissipation:
250mW
Voltage - Forward(Vf@If):
1.25V@200mA
Current - Rectified:
200mA
Mfr. Part #:
BAV21W
Package:
SOD-123
Product Description
Product Overview
This product line consists of Silicon Epitaxial Planar Diodes, specifically high-voltage switching diodes designed for surface mount applications. They offer fast switching speeds and are ideally suited for automatic insertion in electronic assemblies. These diodes are suitable for various high-voltage switching applications.
Product Attributes
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
- Package Type: Plastic surface mounted package; 2 leads SOD-123
Technical Specifications
| Parameter | Symbol | BAV19W | BAV20W | BAV21W | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25 OC) | |||||
| Repetitive Peak Reverse Voltage | VRRM | 120 | 200 | 250 | V |
| Reverse Voltage | VR | 100 | 150 | 200 | V |
| Average Rectified Forward Current | IF(AV) | 200 | mA | ||
| Forward Continuous Current | IFM | 400 | mA | ||
| Repetitive Peak Forward Current | IFRM | 625 | mA | ||
| Non-repetitive Peak Forward Surge Current at t = 1 ms | IFSM | 2.5 | A | ||
| Non-repetitive Peak Forward Surge Current at t = 1 s | IFSM | 0.5 | A | ||
| Power Dissipation | Pd | 250 | mW | ||
| Operating and Storage Temperature Range | Tj, Tstg | - 65 to + 150 | OC | ||
| Characteristics (at Ta = 25 OC) | |||||
| Forward Voltage at IF = 100 mA | VF | - 1 | V | ||
| Forward Voltage at IF = 200 mA | VF | - 1.25 | V | ||
| Reverse Breakdown Voltage at IR = 100 A | V(BR)R | 120 | 200 | 250 | - |
| Reverse Current at VR = 100 V | IR | - | - | 100 | nA |
| Reverse Current at VR = 150 V | IR | - | 100 | - | nA |
| Reverse Current at VR = 200 V | IR | 100 | - | - | nA |
| Total Capacitance at VR = 0 , f = 1 MHz | CT | - 5 | pF | ||
| Reverse Recovery Time at IF = IR = 30 mA, Irr = 0.1IR, RL = 100 | trr | - 50 | ns | ||
Marking
- BAV19W: JX
- BAV20W: T2
- BAV21W: T3
Pinning
| PIN | DESCRIPTION |
|---|---|
| 1 | Cathode |
| 2 | Anode |
2410121523_CBI-BAV21W_C2919736.pdf
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