PNP Plastic Encapsulated Transistor CBI BC857BW Ideal for Switching and AF Amplifier Applications
Key Attributes
Model Number:
BC857BW
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
100MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-
Mfr. Part #:
BC857BW
Package:
SOT-323
Product Description
Product Overview
These PNP plastic-encapsulated transistors are ideally suited for automatic insertion and are designed for switching and AF amplifier applications. They offer reliable performance in various electronic circuits.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Material: Plastic-Encapsulate
- Type: Transistor (PNP)
- Package Type: SOT-323
Technical Specifications
| Model | Parameter | Value | Unit | Test Conditions |
|---|---|---|---|---|
| BC856W | Collector-Base Voltage (VCBO) | -80 | V | IC= -10A, IE=0 |
| Collector-Emitter Voltage (VCEO) | -65 | V | IC= -10mA, IB=0 | |
| Device Marking | 3A | |||
| BC857W | Collector-Base Voltage (VCBO) | -50 | V | IC= -10A, IE=0 |
| Collector-Emitter Voltage (VCEO) | -45 | V | IC= -10mA, IB=0 | |
| Device Marking | 3E (AW), 3F (BW), 3G (CW) | |||
| BC858W | Collector-Base Voltage (VCBO) | -30 | V | IC= -10A, IE=0 |
| Collector-Emitter Voltage (VCEO) | -30 | V | IC= -10mA, IB=0 | |
| Device Marking | 3J (AW), 3K (BW), 3L (CW) | |||
| Emitter-Base Voltage (VEBO) | -5 | V | IE= -1A, IC=0 | |
| Collector Current Continuous (IC) | -0.1 | A | ||
| Collector Power Dissipation (PC*) | 150 | mW | (Ta=25) | |
| Junction Temperature (TJ) | 150 | |||
| Storage Temperature (Tstg) | -65-150 | |||
| BC856AW, 857AW,858AW | DC current gain (hFE) | 125 | VCE= -5V, IC= -2mA | |
| 250 | ||||
| 420 | ||||
| BC856BW, 857BW,858BW | DC current gain (hFE) | 220 | VCE= -5V, IC= -2mA | |
| 475 | ||||
| 800 | ||||
| BC857CW,BC858CW | DC current gain (hFE) | VCE= -5V, IC= -2mA | ||
| Collector-emitter saturation voltage (VCE(sat)) | -0.65 | V | IC=-100mA, IB= -5mA | |
| Base-emitter saturation voltage (VBE(sat)) | -1.1 | V | IC= -100mA, IB= -5mA | |
| Transition frequency (fT) | 100 | MHz | VCE= -5V, IC= -10mA, f=100MHz | |
| Collector capacitance (Cob) | 4.5 | pF | VCB=-10V, f=1MHz | |
| Collector cut-off current (ICBO) | -15 | nA | VCB= -30 V , IE=0 | |
Pinout: 1. BASE, 2. EMITTER, 3. COLLECTOR
2410121326_CBI-BC857BW_C2919782.pdf
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