SOT23 Package NPN Silicon Epitaxial Transistor CBI BC847C Ideal for Switching and Amplifier Circuits
Key Attributes
Model Number:
BC847C
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
65V
Mfr. Part #:
BC847C
Package:
SOT-23
Product Description
Product Overview
This NPN Silicon Epitaxial Transistor is designed for switching and amplifier applications. For complementary PNP types, the BC856...BC860 is recommended. Available in a SOT-23 Plastic Package.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Package Type: SOT-23 Plastic Package
- Transistor Type: NPN Silicon Epitaxial Transistor
Technical Specifications
| Parameter | Symbol | BC846 | BC847, BC850 | BC848, BC849 | Units | |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25 C) | ||||||
| Collector Base Voltage | VCBO | 80 | 50 | 30 | V | |
| Collector Emitter Voltage | VCEO | 65 | 45 | 30 | V | |
| Emitter Base Voltage | VEBO | 6 | 6 | 5 | V | |
| Collector Current | IC | 100 | mA | |||
| Peak Collector Current | ICM | 200 | mA | |||
| Power Dissipation | Ptot | 200 | mW | |||
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | TS | -65 to +150 | C | |||
| Characteristics at Tamb = 25 C | ||||||
| DC Current Gain | hFE | 110 - 220 | 200 - 450 | 420 - 800 | - | |
| (at VCE = 5 V, IC =2 mA) | A | B | C | - | ||
| Collector Emitter Saturation Voltage | VCEsat | 250 (at IC = 10 mA, IB = 0.5 mA) | mV | |||
| 600 (at IC = 100 mA, IB = 5 mA) | mV | |||||
| Base Emitter On Voltage | VBE(on) | 580 - 700 (at IC = 2 mA, VCE = 5 V) | mV | |||
| 720 (at IC = 10 mA, VCE = 5V) | mV | |||||
| Collector Cutoff Current | ICBO | - 15 (at VCB = 30 V) | nA | |||
| Current Gain Bandwidth Product | fT | 300 (at VCE = 5 V, IC = 10 mA, f = 100 MHz) | MHz | |||
| Output Capacitance | Cob | - 6 (at VCB = 10 V, f = 1 MHz) | pF | |||
| Input Capacitance | Cib | 9 (at VEB = 0.5 V, f = 1 MHz) | pF | |||
| Noise Figure | NF | 10 (at IC = 200 A, VCE = 5 V, BC846, BC847, BC848 RG = 2 K, f =1 KHz) | dB | |||
| 4 (at IC = 200 A, VCE = 5 V, BC849 RG = 2 K, f = 30 ~15 KHz) | dB | |||||
| 4 (at IC = 200 A, VCE = 5 V, BC850 RG = 2 K, f = 30 ~15 KHz) | dB | |||||
| 3 (at IC = 200 A, VCE = 5 V, BC850 RG = 2 K, f = 30 ~15 KHz) | dB | |||||
| Package Outline Dimensions | ||||||
| Symbol | Dimension in Millimeters | Min | Max | |||
| A | 0.90 | 1.10 | ||||
| A1 | 0.013 | 0.100 | ||||
| B | 1.80 | 2.00 | ||||
| bp | 0.35 | 0.50 | ||||
| C | 0.09 | 0.150 | ||||
| D | 2.80 | 3.00 | ||||
| E | 1.20 | 1.40 | ||||
| HE | 2.20 | 2.80 | ||||
| Lp | 0.20 | 0.50 | ||||
| 0 | 5 | |||||
2410121447_CBI-BC847C_C21714161.pdf
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