General Purpose Planar Switching Diode CBI 1N914WS Featuring Low Forward Voltage and High Reliability
Key Attributes
Model Number:
1N914WS
Product Custom Attributes
Reverse Leakage Current (Ir):
25nA
Non-Repetitive Peak Forward Surge Current:
1A
Reverse Recovery Time (trr):
50ns
Voltage - DC Reverse (Vr) (Max):
100V
Pd - Power Dissipation:
200mW
Voltage - Forward(Vf@If):
1V@10mA
Current - Rectified:
200mA
Mfr. Part #:
1N914WS
Package:
SOD-323
Product Description
Product Overview
This is a Silicon Epitaxial Planar Switching Diode designed for various electronic applications. It features a compact SOD-323 package and is suitable for general-purpose switching functions. Key electrical characteristics include low forward voltage, high reverse breakdown voltage, and fast switching speed.
Product Attributes
- Marking Code: W2
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
|---|---|---|---|---|
| Absolute Maximum Ratings | ||||
| Repetitive Reverse Voltage | VRRM | 100 | V | |
| Average Rectified Forward Current | IF(AV) | 200 | mA | |
| Non-repetitive Peak Forward Surge Current | IFSM | 0.5 | A | at t = 1 s |
| 1 | A | at t = 1 s | ||
| Power Dissipation | Ptot | 200 | mW | (Ta = 25 OC) |
| Thermal Resistance Junction to Ambient | RJA | 625 | OC/W | |
| Junction Temperature | Tj | 150 | OC | |
| Storage Temperature Range | Tstg | - 55 to + 150 | OC | |
| Electrical Characteristics | ||||
| Forward Voltage | VF | - | 1 V | at IF = 10 mA |
| Reverse Breakdown Voltage | V(BR)R | 75 | - | at IR = 5 A |
| 100 | - | at IR = 100 A | ||
| Reverse Current | IR | - | 25 nA | at VR = 20 V |
| - | 5 A | at VR = 75 V | ||
| - | 50 A | at VR = 20 V, TJ = 150 OC | ||
| Total Capacitance | Ctot | - | 4 pF | at VR = 0 V, f = 1 MHz |
| Reverse Recovery Time | trr | - | 50 ns | at IF = IR = 30 mA, RL = 100 , IRR = 3 mA |
Package Outline
Plastic surface mounted package; 2 leads SOD-323
2410121221_CBI-1N914WS_C5362072.pdf
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