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quality General purpose low frequency power amplifier transistor CBI 2SD669U plastic encapsulated package type factory
quality General purpose low frequency power amplifier transistor CBI 2SD669U plastic encapsulated package type factory

General purpose low frequency power amplifier transistor CBI 2SD669U plastic encapsulated package type

Key Attributes
Model Number: 2SD669U
Product Custom Attributes
Current - Collector Cutoff:
10uA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
750mW
Transition Frequency(fT):
140MHz
Type:
NPN
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
160V
Mfr. Part #:
2SD669U
Package:
SOT-89
Product Description

Product Overview

This is a low-frequency power amplifier, offered as a complementary pair with the 2SB649. It is designed for general-purpose amplification applications. The transistor is housed in a plastic-encapsulated package.

Product Attributes

  • Complementary Pair with 2SB649
  • Marking: D669
  • Package Type: Plastic-Encapsulated Transistor
  • Origin: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
Collector-Base Voltage VCBO 180 V
Collector-Emitter Voltage VCEO 160 V
Emitter-Base Voltage VEBO 5 V
Collector Current - Continuous IC 1.5 A
Collector Dissipation PC 0.75 W
Thermal Resistance from Junction to Ambient RJA 167 /W
Junction Temperature TJ 150
Storage Temperature Tstg -55 ~+150
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
Collector-base breakdown voltage V(BR)CBO IC=1mA, IE=0 180 V
Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 160 V
Emitter-base breakdown voltage V(BR)EBO IE=1mA, IC=0 5 V
Collector cut-off current ICBO VCB=160V, IE=0 10 A
DC current gain hFE(1) VCE=5V, IC=150mA 60 320
DC current gain hFE(2) VCE=5V, IC=500mA 30
Collector-emitter saturation voltage VCE(sat) IC=600mA, IB=50mA 1 V
Base-emitter voltage VBE VCE=5V, IC=150mA 1.5 V
Transition frequency fT VCE=5V, IC=150mA 140 MHz
Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 14 pF
hFE(1) Rank Range
B 60-120
C 100-200
D 160-320
Symbol Dimension in Millimeters Min Max
A 1.40 1.60
B 2.95 3.05
b1 1.45 1.70
b2 0.45 0.56
b3 0.35 0.50
C 0.35 0.50
D 4.40 4.60
E 2.35 2.55
HE 3.90 4.40
Lp 0.90 1.10

2409302200_CBI-2SD669U_C5362125.pdf

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