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quality Silicon Epitaxial Planar High Voltage Switching Diode CBI BAS21AW in Compact SOT 323 Plastic Package factory
quality Silicon Epitaxial Planar High Voltage Switching Diode CBI BAS21AW in Compact SOT 323 Plastic Package factory

Silicon Epitaxial Planar High Voltage Switching Diode CBI BAS21AW in Compact SOT 323 Plastic Package

Key Attributes
Model Number: BAS21AW
Product Custom Attributes
Mfr. Part #:
BAS21AW
Package:
SOT-323
Product Description

Product Overview

This document details the Absolute Maximum Ratings and Characteristics for a series of High Voltage Switching Diodes, including models BAS19W, BAS20W, BAS21W, BAS21AW, BAS21CW, and BAS21SW. These silicon epitaxial planar diodes are designed for high voltage applications and are housed in a SOT-323 plastic package. They offer various reverse voltage ratings and forward current capabilities, making them suitable for a range of electronic switching functions.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Package Type: SOT-323 Plastic Package
  • Material: Silicon Epitaxial Planar
  • Product Type: High Voltage Switching Diodes

Technical Specifications

Parameter Symbol BAS19W BAS20W BAS21W Unit
Absolute Maximum Ratings (Ta = 25)
Reverse Voltage VR 120 200 250 V
Continuous Forward Current IF(AV) 200 mA
Repetitive Peak Forward Current IFRM 625 mA
Non-repetitive Peak Forward Surge Current (at t = 1 s) IFSM 0.5 A
Non-repetitive Peak Forward Surge Current (at t = 1 s) IFSM 2.5 A
Total Device Dissipation Ptot 250 mW
Junction to Ambient Thermal Resistance RJA 357 /W
Junction and Storage Temperature Range Tj, Tstg -55 to +150
Characteristics at Ta = 25
Reverse Breakdown Voltage (at IR = 100 A) V(BR)R 120 200 250 V
Forward Voltage (at IF = 100 mA) VF - V
Forward Voltage (at IF = 200 mA) VF 1.25 V
Reverse Current (at VR = 100 V) IR - A
Reverse Current (at VR = 150 V) IR - A
Reverse Current (at VR = 200 V) IR - A
Reverse Current (at VR = 100 V, Tj = 150) IR 0.1 A
Reverse Current (at VR = 150 V, Tj = 150) IR 100 A
Reverse Current (at VR = 200 V, Tj = 150) IR 100 A
Total Capacitance (at VR = 0, f = 1 MHz) Ctot 5 pF
Reverse Recovery Time (at IF = IR= 30 mA, IR(REC) = 3 mA, RL = 100 ) trr 50 ns
Model Marking Code
BAS19W T3
BAS20W T3
BAS21W T3
BAS21AW F2
BAS21CW F3
BAS21SW F4

2509181520_CBI-BAS21AW_C51822173.pdf

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